A non destructive method to characterize the properties of SiO2 films in SiO2-Si structures and analyze their variations under different external actions is presented and discussed. The characterization of hole traps, electron traps and defect precursors states in SiO2 films are carried out as well as their evolution and influence on the SiO2-Si structure degradation behavior. Results measured on SiO2-Si structures obtained from different technological processes and submitted to different treatments are reported in order to discuss the possibilities of this method as a power tool to assess the stability and quality of insulating layer on semiconductors.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium Proceedings
EditorsKenneth P. Rodbell, William F. Filter, Harold J. Frost, Paul S. Ho
PublisherMaterials Research Society
Pages49-54
Number of pages6
ISBN (Print)1558992057
StatePublished - 1 Jan 1993
EventSymposium on Materials Reliability in Microelectronics III - San Francisco, CA, USA
Duration: 12 Apr 1993 → 15 Apr 1993

Publication series

NameMaterials Research Society Symposium Proceedings
Volume309
ISSN (Print)0272-9172

Conference

ConferenceSymposium on Materials Reliability in Microelectronics III
CitySan Francisco, CA, USA
Period12/04/93 → 15/04/93

    Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

ID: 47621059