1. 2018
  2. Dopant-stimulated growth of GaN nanotube-like nanostructures on Si(111) by molecular beam epitaxy

    Bolshakov, A. D., Mozharov, A. M., Sapunov, G. A., Shtrom, I. V., Sibirev, N. V., Fedorov, V. V., Ubyivovk, E. V., Tchernycheva, M., Cirlin, G. E. & Mukhin, I. S., 15 Jan 2018, In: Beilstein Journal of Nanotechnology. 9, 1, p. 146-154 9 p.

    Research output: Contribution to journalArticlepeer-review

  3. 2016
  4. Spectral shift of the transparency line of a semiconductor multilayer resonator under pulsed laser radiation

    Ryzhov, A. A., Belousova, I. M., Tsyrlin, G. E., Khrebtov, A. I. & Reznik, R. R., 23 Aug 2016, Proceedings - 2016 International Conference Laser Optics, LO 2016. Institute of Electrical and Electronics Engineers Inc., p. R41 7549756. (Proceedings - 2016 International Conference Laser Optics, LO 2016).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionResearchpeer-review

  5. 2007
  6. Numerical simulation of the temperature dependence of the photoluminescence spectra of InAs/GaAs quantum dots

    Smirnov, M. B., Talalaev, V. G., Novikov, B. V., Sarangov, S. V., Tsyrlin, G. É. & Zakharov, N. D., Jun 2007, In: Physics of the Solid State. 49, 6, p. 1184-1190 7 p.

    Research output: Contribution to journalArticlepeer-review

  7. 2000
  8. Recombination emission from InAs quantum dots grown on vicinal GaAs surfaces

    Talalaev, V. G., Novikov, B. V., Verbin, S. Y., Novikov, A. B., Thath, D. S., Shchur, I. V., Gobsch, G., Goldhahn, R., Stein, N., Golombek, A., Tsyrlin, G. É., Petrov, V. N., Ustinov, V. M., Zhukov, A. E. & Egorov, A. Y., Jan 2000, In: Semiconductors. 34, 4, p. 453-461 9 p.

    Research output: Contribution to journalArticlepeer-review

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