<p num="25">FIELD: chemistry.</p> <p num="26">SUBSTANCE: invention relates to production of semiconductor nanomaterials. Method of forming thin ordered semiconductor filamentary nanocrystals (FNC) of gallium arsenide on silicon is characterized by the fact that on silicon substrate with crystallographic orientation of surface (111) or (100) forming an inhibitory layer of silicon oxide (SiO<sub>2</sub>) with thickness of 80–120 nm by thermal acidification in nitrogen/water vapour medium at temperature T = 850–950 °C at pressure close to atmospheric pressure, after which an electron resist layer is formed, in which windows are formed by electronic lithography by exposure to an electron beam with subsequent manifestation, wherein development process is stopped by washing in solvent and subsequent drying, then performing reactive ion-plasma etching in plasma-forming mixture of gases SF<sub>6</sub> and Ar with formation of windows in silicon oxide inhibitor layer, in which molecular-beam epitaxy using Ga and As
