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  1. 2020

  2. Free Energy of Nucleus Formation during Growth of III-V Semiconductor Nanowires

    Dubrovskii, V. G., Sokolovskii, A. S. & Shtrom, I. V., 1 Sep 2020, In: Technical Physics Letters. 46, 9, p. 889-892 4 p.

    Research output: Contribution to journal › Article › peer-review

  3. Limits of III-V Nanowire Growth

    Dubrovskii, V. G., Sokolovskii, A. S. & Hijazi, H., 1 Sep 2020, In: Technical Physics Letters. 46, 9, p. 859-863 5 p.

    Research output: Contribution to journal › Article › peer-review

  4. Ga2Se3 Nanowires via Au-Assisted Heterovalent Exchange Reaction on GaAs

    Berto, F., Haghighian, N., Ferfolja, K., Gardonio, S., Fanetti, M., Mussi, V., Dubrovskii, V. G., Shtrom, I. V., Franciosi, A. & Rubini, S., 13 Aug 2020, In: Journal of Physical Chemistry C. 124, 32, p. 17783-17794 12 p.

    Research output: Contribution to journal › Article › peer-review

  5. Be, Te, and Si Doping of GaAs Nanowires: Theory and Experiment

    Dubrovskii, V. G., Hijazi, H., Goktas, N. I. & LaPierre, R. R., 6 Aug 2020, In: Journal of Physical Chemistry C. 124, 31, p. 17299-17307 9 p.

    Research output: Contribution to journal › Article › peer-review

  6. Surface Diffusion of Gallium as the Origin of Inhomogeneity in Selective Area Growth of GaN Nanowires on AlxOy Nucleation Stripes

    Sobanska, M., Zytkiewicz, Z. R., Ekielski, M., Klosek, K., Sokolovskii, A. S. & Dubrovskii, V. G., 1 Jul 2020, In: Crystal Growth and Design. 20, 7, p. 4770-4778 9 p.

    Research output: Contribution to journal › Article › peer-review

  7. Effect of Arsenic Depletion on the Silicon Doping of Vapor-Liquid-Solid GaAs Nanowires

    Dubrovskii, V. G. & Hijazi, H., 1 Jun 2020, In: Physica Status Solidi - Rapid Research Letetrs. 14, 6, 5 p., 2000129.

    Research output: Contribution to journal › Article › peer-review

  8. MBE-Grown In xGa1– xAs Nanowires with 50% Composition

    Dubrovskii, V. G., Reznik, R. R., Kryzhanovskaya, N. V., Shtrom, I. V., Ubyivovk, E. D., Soshnikov, I. P. & Cirlin, G. E., 1 Jun 2020, In: Semiconductors. 54, 6, p. 650-653 4 p.

    Research output: Contribution to journal › Article › peer-review

  9. Oscillations of As Concentration and Electron-to-Hole Ratio in Si-Doped GaAs Nanowires

    Dubrovskii, V. G. & Hijazi, H., May 2020, In: Nanomaterials. 10, 5, 10 p., 833.

    Research output: Contribution to journal › Article › peer-review

  10. Growth of Self-Catalyzed InAs/InSb Axial Heterostructured Nanowires: Experiment and Theory

    Arif, O., Zannier, V., Dubrovskii, V. G., Shtrom, I. V., Rossi, F., Beltram, F. & Sorba, L., Mar 2020, In: Nanomaterials. 10, 3, 12 p., 494.

    Research output: Contribution to journal › Article › peer-review

  11. Stabilization of wurtzite crystal phase in arsenide nanowires via elastic stress

    Sibirev, N. V., Berdnikov, Y. S., Sibirev, V. N. & Dubrovskii, V. G., 2020, 2020 International Conference Laser Optics (ICLO). Institute of Electrical and Electronics Engineers Inc.

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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