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  1. 2016

  2. Origin of Spontaneous Core-Shell AlGaAs Nanowires Grown by Molecular Beam Epitaxy

    Dubrovskii, V. G., Shtrom, I. V., Reznik, R. R., Samsonenko, Y. B., Khrebtov, A. I., Soshnikov, I. P., Rouvimov, S., Akopian, N., Kasama, T. & Cirlin, G. E., 7 Dec 2016, In: Crystal Growth and Design. 16, 12, p. 7251-7255 5 p.

    Research output: Contribution to journal › Article › peer-review

  3. On a new method of heterojunction formation in III-V nanowires

    Sibirev, N. V., Koryakin, A. A. & Dubrovskii, V. G., Dec 2016, In: Semiconductors. 50, 12, p. 1566-1568 3 p.

    Research output: Contribution to journal › Article › peer-review

  4. Length distributions of Au-catalyzed and In-catalyzed InAs nanowires

    Dubrovskii, V. G., Sibirev, N. V., Berdnikov, Y., Gomes, U. P., Ercolani, D., Zannier, V. & Sorba, L., 16 Sep 2016, In: Nanotechnology. 27, 37, 9 p., 375602.

    Research output: Contribution to journal › Article › peer-review

  5. Regimes of radial growth for Ga-catalyzed GaAs nanowires

    Dubrovskii, V. G., Berdnikov, Y. & Sibirev, N. V., Jul 2016, In: Applied Physics A: Materials Science and Processing. 122, 7, 7 p., 671.

    Research output: Contribution to journal › Article › peer-review

  6. 2015

  7. Self-Equilibration of the Diameter of Ga-Catalyzed GaAs Nanowires

    Dubrovskii, V. G., Xu, T., Álvarez, A. D., Plissard, S. R., Caroff, P., Glas, F. & Grandidier, B., 12 Aug 2015, In: Nano Letters. 15, 8, p. 5580-5584 5 p.

    Research output: Contribution to journal › Article › peer-review

  8. 2014

  9. Record pure zincblende phase in GaAs nanowires down to 5 nm in radius

    Gil, E., Dubrovskii, V. G., Avit, G., André, Y., Leroux, C., Lekhal, K., Grecenkov, J., Trassoudaine, A., Castelluci, D., Monier, G., Ramdani, R. M., Robert-Goumet, C., Bideux, L., Harmand, J. C. & Glas, F., 9 Jul 2014, In: Nano Letters. 14, 7, p. 3938-3944 7 p.

    Research output: Contribution to journal › Article › peer-review

  10. 2010

  11. PHOTOLUMINESCENCE PROPERTIES OF GAAS NANOWIRE ENSEMBLES WITH ZINCBLENDE AND WURTZITE CRYSTAL STRUCTURE

    Novikov, B. V., Serov, S. Y., Filosofov, N. G., Shtrom, I. V., Talalaev, V. G., Vyvenko, O. F., Ubyivovk, E. V., Samsonenko, Y. B., Bouravleuv, A. D., Soshnikov, I. P., Sibirev, N. V., Cirlin, G. E. & Dubrovskii, V. G., 2010, In: Physica Status Solidi - Rapid Research Letetrs. 4, 7, p. 175-177 3 p.

    Research output: Contribution to journal › Article

  12. Начальный этап роста нитевидных нанокристаллов

    Сибирёв, Н. В., Назаренко, М. В., Цырлин, Г. Э., Самсоненко, Ю. Б. & Дубровский, В. Г., 2010, In: ФИЗИКА И ТЕХНИКА ПОЛУПРОВОДНИКОВ. 44, 1, p. 114-117

    Research output: Contribution to journal › Article › peer-review

  13. 2009

  14. Optical properties of GaAs nanowires studied by low temperature photoluminescence

    Novikov, B. V., A.Yu., S., Filosofov, N. G., Shtrom, I. V., Talalaev, V. G., Vyvenko, O. F., Ubyivovk, E. V., Samsonenko, Y. B., Bouravleuv, A. D., Soshnikov, I. P., Sibirev, N. V., Dubrovskii, V. G. & Cirlin, G. E., 2009, 17th International Symposium NANOSTRUCTURES: Physics and Technology: proceedings. Minsk: ФТИ им.Иоффе, p. 186-187

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Research

  15. Полупроводниковые нитевидные нанокристаллы: синтез, свойства, применения. Обзор

    Дубровский, В. Г., Цырлин, Г. Э. & Устинов, В. М., 2009, In: Semiconductors. 43, 12, p. 1585-1629

    Research output: Contribution to journal › Literature review

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