51 - 60 out of 65Page size: 10
  1. 2015

  2. Experimental determination of the top of the valence band in amorphous Al2O3 and γ-Al2O3

    Konyushenko, M. A., Filatova, E. O., Konashuk, A. S., Nelyubov, A. V. & Shulakov, A. S., 2015, In: Technical Physics Letters. 10, p. 922-925

    Research output: Contribution to journal › Article

  3. Interpretation of the Changing the Band Gap of Al2O3 Depending on Its Crystalline Form: Connection with Different Local Symmetries

    Filatova, E. O. & Konashuk, A. S., 2015, In: Journal of Physical Chemistry C. 119, 35, p. 20755-20761 7 p.

    Research output: Contribution to journal › Article › peer-review

  4. Экспериментальное определение положения потолка валентной зоны в a-Al2O3 и гамма-Al2O3

    Конюшенко, М. А., Филатова, Е. О., Конашук, А. С., Нелюбов, А. В. & Шулаков, А. С., 2015, In: ПИСЬМА В "ЖУРНАЛ ТЕХНИЧЕСКОЙ ФИЗИКИ". 41, 19, p. 8-15

    Research output: Contribution to journal › Article › peer-review

  5. 2014

  6. Application of soft X-ray reflectometry for analysis of underlayer influence on structure of atomic-layer deposited SrTixOy films

    Filatova, E. O., Kozhevnikov, I. V., Sokolov, A. A., Konashuk, A. S., Schaefers, F., Popovici, M. & Afanas'Ev, V. V., 2014, In: Journal of Electron Spectroscopy and Related Phenomena. 196, p. 110-116

    Research output: Contribution to journal › Article

  7. Memristive switching in metal/TiO2/IL/metal nanostructures- Устный доклад в Секции S: Memristormaterials, mechanisms and devices for unconventional, выступление 28 мая в 11:00

    Filatova, E. O., Konyushenko, M. A., Konashuk, A. S., Selivanov, A. A., Drozd, V. E. & Baraban, A. P., 2014.

    Research output: Contribution to conference › Abstract

  8. Memristive switching mechanism for TiO2/ITO/Al assembly: formation of molecular oxygen in TiO2

    Filatova, E., Konashuk, A., Sokolov, A., Schaefers, F. & Konyushenko, M., 2014, In: Scientific Reports. находится на повторном рецензировании

    Research output: Contribution to journal › Article › peer-review

  9. Metal/IL/TiO2/metal nanostructures as the most promising switching materials in RRAM memory Устный доклад- Филатова Е.О.

    Baraban, A. P., Selivanov, A. A., Konashuk, A. S., Drozd, V. E. & Filatova, E. O., 2014, p. 40.

    Research output: Contribution to conference › Abstract

  10. Transparent-conductive-oxide (TCO) buffer layer effect on the resistive switching process in metal/TiO2/TCO/metal assemblies

    Filatova, E. O., Baraban, A. P., Konashuk, A. S., Konyushenko, M. A., Selivanov, A. A., Sokolov, A. A., Schaefers, F. & Drozd, V. E., 2014, In: New Journal of Physics. 16, p. 113014_1-15

    Research output: Contribution to journal › Article

  11. X-ray spectroscopic study of influence of initial growth conditions on self-organization of thin oxide layers - устный доклад

    Filatova, E. O., Konyushenko, M. A., Konashuk, A. S., Sokolov, A. A. & Drozd, V. E., 2014.

    Research output: Contribution to conference › Abstract

  12. Мемристор на основе двухслойной структуры с оксидом титана

    Барабан, А. П., Дрозд, В. Е., Конашук, А. С., Селиванов, А. А. & Филатова, Е. О., 2014, p. 153-156.

    Research output: Contribution to conference › Abstract

Previous 12 3 4 5 6 7 Next

ID: 196361