The use of SiC/Si hybrid substrate for MBE growth of thick GaN layers › Научные исследования в СПбГУ

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The use of SiC/Si hybrid substrate for MBE growth of thick GaN layers. / Reznik, R.; Soshnikov, I.; Kukushkin, S.; Osipov, A.; Talalaev, V.; Cirlin, G.

State-of-the-Art Trends of Scientific Research of Artificial and Natural Nanoobjects, STRANN 2018. ред. / Yuri Petrov; Oleg Vyvenko. American Institute of Physics, 2019. 040004 (AIP Conference Proceedings; Том 2064).

Результаты исследований: Публикации в книгах, отчётах, сборниках, трудах конференций › статья в сборнике материалов конференции › научная › Рецензирование

Harvard

Reznik, R , Soshnikov, I , Kukushkin, S , Osipov, A , Talalaev, V & Cirlin, G 2019, The use of SiC/Si hybrid substrate for MBE growth of thick GaN layers. в Y Petrov & O Vyvenko (ред.), State-of-the-Art Trends of Scientific Research of Artificial and Natural Nanoobjects, STRANN 2018., 040004, AIP Conference Proceedings, Том. 2064, American Institute of Physics, International Conference on State-of-the-Art Trends of Scientific Research of Artificial and Natural Nanoobjects, STRANN 2018, Moscow, Российская Федерация, 17/10/18. https://doi.org/10.1063/1.5087683

APA

Reznik, R., Soshnikov, I., Kukushkin, S., Osipov, A., Talalaev, V., & Cirlin, G. (2019). The use of SiC/Si hybrid substrate for MBE growth of thick GaN layers. в Y. Petrov, & O. Vyvenko (Ред.), State-of-the-Art Trends of Scientific Research of Artificial and Natural Nanoobjects, STRANN 2018 [040004] (AIP Conference Proceedings; Том 2064). American Institute of Physics. https://doi.org/10.1063/1.5087683

Vancouver

Reznik R , Soshnikov I , Kukushkin S , Osipov A , Talalaev V, Cirlin G. The use of SiC/Si hybrid substrate for MBE growth of thick GaN layers. в Petrov Y, Vyvenko O, Редакторы, State-of-the-Art Trends of Scientific Research of Artificial and Natural Nanoobjects, STRANN 2018. American Institute of Physics. 2019. 040004. (AIP Conference Proceedings). https://doi.org/10.1063/1.5087683

Author

Reznik, R. ; Soshnikov, I. ; Kukushkin, S. ; Osipov, A. ; Talalaev, V. ; Cirlin, G. / The use of SiC/Si hybrid substrate for MBE growth of thick GaN layers. State-of-the-Art Trends of Scientific Research of Artificial and Natural Nanoobjects, STRANN 2018. Редактор / Yuri Petrov ; Oleg Vyvenko. American Institute of Physics, 2019. (AIP Conference Proceedings).

BibTeX

@inproceedings{1f2ca0367d9745ef812d4ec548d240c1,

title = "The use of SiC/Si hybrid substrate for MBE growth of thick GaN layers",

abstract = "In this work the possibility of thick GaN layers growth by molecular epitaxy on a silicon substrate with nanoscale buffer layer of silicon carbide without any AlN buffer layers was demonstrated for the first time. Morphological and optical properties of the resulting structure are described.",

author = "R. Reznik and I. Soshnikov and S. Kukushkin and A. Osipov and V. Talalaev and G. Cirlin",

note = "Publisher Copyright: {\textcopyright} 2019 Author(s).; International Conference on State-of-the-Art Trends of Scientific Research of Artificial and Natural Nanoobjects, STRANN 2018 ; Conference date: 17-10-2018 Through 19-10-2018",

year = "2019",

month = jan,

day = "15",

doi = "10.1063/1.5087683",

language = "English",

series = "AIP Conference Proceedings",

publisher = "American Institute of Physics",

editor = "Yuri Petrov and Oleg Vyvenko",

booktitle = "State-of-the-Art Trends of Scientific Research of Artificial and Natural Nanoobjects, STRANN 2018",

address = "United States",

}

RIS

TY - GEN

T1 - The use of SiC/Si hybrid substrate for MBE growth of thick GaN layers

AU - Reznik, R.

AU - Soshnikov, I.

AU - Kukushkin, S.

AU - Osipov, A.

AU - Talalaev, V.

AU - Cirlin, G.

PY - 2019/1/15

Y1 - 2019/1/15

N2 - In this work the possibility of thick GaN layers growth by molecular epitaxy on a silicon substrate with nanoscale buffer layer of silicon carbide without any AlN buffer layers was demonstrated for the first time. Morphological and optical properties of the resulting structure are described.

AB - In this work the possibility of thick GaN layers growth by molecular epitaxy on a silicon substrate with nanoscale buffer layer of silicon carbide without any AlN buffer layers was demonstrated for the first time. Morphological and optical properties of the resulting structure are described.

UR - http://www.scopus.com/inward/record.url?scp=85060530544&partnerID=8YFLogxK

U2 - 10.1063/1.5087683

DO - 10.1063/1.5087683

M3 - Conference contribution

T3 - AIP Conference Proceedings

BT - State-of-the-Art Trends of Scientific Research of Artificial and Natural Nanoobjects, STRANN 2018

A2 - Petrov, Yuri

A2 - Vyvenko, Oleg

PB - American Institute of Physics

T2 - International Conference on State-of-the-Art Trends of Scientific Research of Artificial and Natural Nanoobjects, STRANN 2018

Y2 - 17 October 2018 through 19 October 2018

ER -

ID: 98512237