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Separation of III-N partially-coalesced nanowire arrays from Si substrate. / Lendyashova, V. V.; Kotlyar, K. P.; Gridchin, V. O.; Reznik, R. R.; Lihachev, A. I.; Shubina, K. Y.; Berezovskaya, T. N.; Nikitina, E. V.; Soshnikov, I. P.; Cirlin, G. E.

в: Journal of Physics: Conference Series, Том 2086, № 1, 012191, 06.12.2021.

Результаты исследований: Научные публикации в периодических изданиях › статья в журнале по материалам конференции › Рецензирование

Harvard

Lendyashova, VV, Kotlyar, KP, Gridchin, VO, Reznik, RR, Lihachev, AI, Shubina, KY, Berezovskaya, TN, Nikitina, EV, Soshnikov, IP & Cirlin, GE 2021, 'Separation of III-N partially-coalesced nanowire arrays from Si substrate', Journal of Physics: Conference Series, Том. 2086, № 1, 012191. https://doi.org/10.1088/1742-6596/2086/1/012191

APA

Lendyashova, V. V., Kotlyar, K. P., Gridchin, V. O., Reznik, R. R., Lihachev, A. I., Shubina, K. Y., Berezovskaya, T. N., Nikitina, E. V., Soshnikov, I. P., & Cirlin, G. E. (2021). Separation of III-N partially-coalesced nanowire arrays from Si substrate. Journal of Physics: Conference Series, 2086(1), [012191]. https://doi.org/10.1088/1742-6596/2086/1/012191

Vancouver

Lendyashova VV, Kotlyar KP, Gridchin VO, Reznik RR, Lihachev AI, Shubina KY и пр. Separation of III-N partially-coalesced nanowire arrays from Si substrate. Journal of Physics: Conference Series. 2021 Дек. 6;2086(1). 012191. https://doi.org/10.1088/1742-6596/2086/1/012191

Author

Lendyashova, V. V. ; Kotlyar, K. P. ; Gridchin, V. O. ; Reznik, R. R. ; Lihachev, A. I. ; Shubina, K. Y. ; Berezovskaya, T. N. ; Nikitina, E. V. ; Soshnikov, I. P. ; Cirlin, G. E. / Separation of III-N partially-coalesced nanowire arrays from Si substrate. в: Journal of Physics: Conference Series. 2021 ; Том 2086, № 1.

BibTeX

@article{f2b787dccb9949b79011eb3dff511679,
title = "Separation of III-N partially-coalesced nanowire arrays from Si substrate",
abstract = "In modern optoelectronics, arrays or single nanowires (NWs) of III-N materials, in particular InGaN, separated from the original substrates are used to fabricate light-emitting diodes or single photon sources. This work describes a technology of separation super-dense arrays or arrays of partially-coalesced InGaN nanowires and single nanowires from a Si substrate by chemical etching in HF:HNO3 solution, which allows preserving the optical properties of the structure for further use.",
author = "Lendyashova, {V. V.} and Kotlyar, {K. P.} and Gridchin, {V. O.} and Reznik, {R. R.} and Lihachev, {A. I.} and Shubina, {K. Y.} and Berezovskaya, {T. N.} and Nikitina, {E. V.} and Soshnikov, {I. P.} and Cirlin, {G. E.}",
note = "Publisher Copyright: {\textcopyright} 2021 Institute of Physics Publishing. All rights reserved.; 8th International School and Conference {"}Saint Petersburg OPEN 2021{"} on Optoelectronics, Photonics, Engineering and Nanostructures, SPbOPEN 2021 ; Conference date: 25-05-2021 Through 28-05-2021",
year = "2021",
month = dec,
day = "6",
doi = "10.1088/1742-6596/2086/1/012191",
language = "English",
volume = "2086",
journal = "Journal of Physics: Conference Series",
issn = "1742-6588",
publisher = "IOP Publishing Ltd.",
number = "1",

}

RIS

TY - JOUR

T1 - Separation of III-N partially-coalesced nanowire arrays from Si substrate

AU - Lendyashova, V. V.

AU - Kotlyar, K. P.

AU - Gridchin, V. O.

AU - Reznik, R. R.

AU - Lihachev, A. I.

AU - Shubina, K. Y.

AU - Berezovskaya, T. N.

AU - Nikitina, E. V.

AU - Soshnikov, I. P.

AU - Cirlin, G. E.

N1 - Publisher Copyright: © 2021 Institute of Physics Publishing. All rights reserved.

PY - 2021/12/6

Y1 - 2021/12/6

N2 - In modern optoelectronics, arrays or single nanowires (NWs) of III-N materials, in particular InGaN, separated from the original substrates are used to fabricate light-emitting diodes or single photon sources. This work describes a technology of separation super-dense arrays or arrays of partially-coalesced InGaN nanowires and single nanowires from a Si substrate by chemical etching in HF:HNO3 solution, which allows preserving the optical properties of the structure for further use.

AB - In modern optoelectronics, arrays or single nanowires (NWs) of III-N materials, in particular InGaN, separated from the original substrates are used to fabricate light-emitting diodes or single photon sources. This work describes a technology of separation super-dense arrays or arrays of partially-coalesced InGaN nanowires and single nanowires from a Si substrate by chemical etching in HF:HNO3 solution, which allows preserving the optical properties of the structure for further use.

UR - http://www.scopus.com/inward/record.url?scp=85122409654&partnerID=8YFLogxK

U2 - 10.1088/1742-6596/2086/1/012191

DO - 10.1088/1742-6596/2086/1/012191

M3 - Conference article

AN - SCOPUS:85122409654

VL - 2086

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

SN - 1742-6588

IS - 1

M1 - 012191

T2 - 8th International School and Conference "Saint Petersburg OPEN 2021" on Optoelectronics, Photonics, Engineering and Nanostructures, SPbOPEN 2021

Y2 - 25 May 2021 through 28 May 2021

ER -

ID: 96851413