DOI

In modern optoelectronics, arrays or single nanowires (NWs) of III-N materials, in particular InGaN, separated from the original substrates are used to fabricate light-emitting diodes or single photon sources. This work describes a technology of separation super-dense arrays or arrays of partially-coalesced InGaN nanowires and single nanowires from a Si substrate by chemical etching in HF:HNO3 solution, which allows preserving the optical properties of the structure for further use.

Язык оригиналаанглийский
Номер статьи012191
ЖурналJournal of Physics: Conference Series
Том2086
Номер выпуска1
DOI
СостояниеОпубликовано - 6 дек 2021
Событие8th International School and Conference "Saint Petersburg OPEN 2021" on Optoelectronics, Photonics, Engineering and Nanostructures, SPbOPEN 2021 - Saint Petersburg, Российская Федерация
Продолжительность: 25 мая 202128 мая 2021

    Предметные области Scopus

  • Физика и астрономия (все)

ID: 96851413