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Phosphorus-Based Nanowires Grown by Molecular-Beam Epitaxy on Silicon. / Cirlin, G. E.; Reznik, R. R.; Samsonenko, Yu B.; Khrebtov, A. I.; Kotlyar, K. P.; Ilkiv, I. V.; Soshnikov, I. P.; Kirilenko, D. A.; Kryzhanovskaya, N. V.

в: Semiconductors, Том 52, № 11, 01.11.2018, стр. 1416-1419.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Cirlin, GE, Reznik, RR, Samsonenko, YB, Khrebtov, AI, Kotlyar, KP, Ilkiv, IV, Soshnikov, IP, Kirilenko, DA & Kryzhanovskaya, NV 2018, 'Phosphorus-Based Nanowires Grown by Molecular-Beam Epitaxy on Silicon', Semiconductors, Том. 52, № 11, стр. 1416-1419. https://doi.org/10.1134/S1063782618110258

APA

Cirlin, G. E., Reznik, R. R., Samsonenko, Y. B., Khrebtov, A. I., Kotlyar, K. P., Ilkiv, I. V., Soshnikov, I. P., Kirilenko, D. A., & Kryzhanovskaya, N. V. (2018). Phosphorus-Based Nanowires Grown by Molecular-Beam Epitaxy on Silicon. Semiconductors, 52(11), 1416-1419. https://doi.org/10.1134/S1063782618110258

Vancouver

Cirlin GE, Reznik RR, Samsonenko YB, Khrebtov AI, Kotlyar KP, Ilkiv IV и пр. Phosphorus-Based Nanowires Grown by Molecular-Beam Epitaxy on Silicon. Semiconductors. 2018 Нояб. 1;52(11):1416-1419. https://doi.org/10.1134/S1063782618110258

Author

Cirlin, G. E. ; Reznik, R. R. ; Samsonenko, Yu B. ; Khrebtov, A. I. ; Kotlyar, K. P. ; Ilkiv, I. V. ; Soshnikov, I. P. ; Kirilenko, D. A. ; Kryzhanovskaya, N. V. / Phosphorus-Based Nanowires Grown by Molecular-Beam Epitaxy on Silicon. в: Semiconductors. 2018 ; Том 52, № 11. стр. 1416-1419.

BibTeX

@article{153f14a4a61147a28adef599f938771a,
title = "Phosphorus-Based Nanowires Grown by Molecular-Beam Epitaxy on Silicon",
abstract = "Abstract: Data on the growth and physical properties of nanostructures of the type “InAsP insert embedded in InP nanowire (NW)” grown on Si (111) surfaces by Au-assisted molecular-beam epitaxy are presented. It is found that nearly 100%-coherent NWs can be grown with a widely varying surface density. A relationship between the optical and structural properties of the NWs is revealed. It is shown that the NWs under study are formed of a purely wurtzite phase. The suggested technology opens up new opportunities for the integration of direct-gap III–V materials and silicon.",
author = "Cirlin, {G. E.} and Reznik, {R. R.} and Samsonenko, {Yu B.} and Khrebtov, {A. I.} and Kotlyar, {K. P.} and Ilkiv, {I. V.} and Soshnikov, {I. P.} and Kirilenko, {D. A.} and Kryzhanovskaya, {N. V.}",
note = "Publisher Copyright: {\textcopyright} 2018, Pleiades Publishing, Ltd.",
year = "2018",
month = nov,
day = "1",
doi = "10.1134/S1063782618110258",
language = "English",
volume = "52",
pages = "1416--1419",
journal = "Semiconductors",
issn = "1063-7826",
publisher = "МАИК {"}Наука/Интерпериодика{"}",
number = "11",

}

RIS

TY - JOUR

T1 - Phosphorus-Based Nanowires Grown by Molecular-Beam Epitaxy on Silicon

AU - Cirlin, G. E.

AU - Reznik, R. R.

AU - Samsonenko, Yu B.

AU - Khrebtov, A. I.

AU - Kotlyar, K. P.

AU - Ilkiv, I. V.

AU - Soshnikov, I. P.

AU - Kirilenko, D. A.

AU - Kryzhanovskaya, N. V.

N1 - Publisher Copyright: © 2018, Pleiades Publishing, Ltd.

PY - 2018/11/1

Y1 - 2018/11/1

N2 - Abstract: Data on the growth and physical properties of nanostructures of the type “InAsP insert embedded in InP nanowire (NW)” grown on Si (111) surfaces by Au-assisted molecular-beam epitaxy are presented. It is found that nearly 100%-coherent NWs can be grown with a widely varying surface density. A relationship between the optical and structural properties of the NWs is revealed. It is shown that the NWs under study are formed of a purely wurtzite phase. The suggested technology opens up new opportunities for the integration of direct-gap III–V materials and silicon.

AB - Abstract: Data on the growth and physical properties of nanostructures of the type “InAsP insert embedded in InP nanowire (NW)” grown on Si (111) surfaces by Au-assisted molecular-beam epitaxy are presented. It is found that nearly 100%-coherent NWs can be grown with a widely varying surface density. A relationship between the optical and structural properties of the NWs is revealed. It is shown that the NWs under study are formed of a purely wurtzite phase. The suggested technology opens up new opportunities for the integration of direct-gap III–V materials and silicon.

UR - http://www.scopus.com/inward/record.url?scp=85055252592&partnerID=8YFLogxK

U2 - 10.1134/S1063782618110258

DO - 10.1134/S1063782618110258

M3 - Article

AN - SCOPUS:85055252592

VL - 52

SP - 1416

EP - 1419

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 11

ER -

ID: 98507847