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Morphology transformation of InGaN nanowires grown on Si substrate by PA-MBE. / Gridchin, V. O.; Dragunova, A. S.; Kotlyar, K. P.; Reznik, R. R.; Komarov, S. D.; Kryzhanovskaya, N. V.; Soshnikov, I. P.; Samsonenko, Y. B.; Cirlin, G. E.

в: Journal of Physics: Conference Series, Том 2086, № 1, 012013, 06.12.2021.

Результаты исследований: Научные публикации в периодических изданиях › статья в журнале по материалам конференции › Рецензирование

Harvard

Gridchin, VO, Dragunova, AS, Kotlyar, KP, Reznik, RR, Komarov, SD, Kryzhanovskaya, NV, Soshnikov, IP, Samsonenko, YB & Cirlin, GE 2021, 'Morphology transformation of InGaN nanowires grown on Si substrate by PA-MBE', Journal of Physics: Conference Series, Том. 2086, № 1, 012013. https://doi.org/10.1088/1742-6596/2086/1/012013

APA

Gridchin, V. O., Dragunova, A. S., Kotlyar, K. P., Reznik, R. R., Komarov, S. D., Kryzhanovskaya, N. V., Soshnikov, I. P., Samsonenko, Y. B., & Cirlin, G. E. (2021). Morphology transformation of InGaN nanowires grown on Si substrate by PA-MBE. Journal of Physics: Conference Series, 2086(1), [012013]. https://doi.org/10.1088/1742-6596/2086/1/012013

Vancouver

Gridchin VO, Dragunova AS, Kotlyar KP, Reznik RR, Komarov SD, Kryzhanovskaya NV и пр. Morphology transformation of InGaN nanowires grown on Si substrate by PA-MBE. Journal of Physics: Conference Series. 2021 Дек. 6;2086(1). 012013. https://doi.org/10.1088/1742-6596/2086/1/012013

Author

Gridchin, V. O. ; Dragunova, A. S. ; Kotlyar, K. P. ; Reznik, R. R. ; Komarov, S. D. ; Kryzhanovskaya, N. V. ; Soshnikov, I. P. ; Samsonenko, Y. B. ; Cirlin, G. E. / Morphology transformation of InGaN nanowires grown on Si substrate by PA-MBE. в: Journal of Physics: Conference Series. 2021 ; Том 2086, № 1.

BibTeX

@article{22b44631657f4c2daa35c66b6beff343,
title = "Morphology transformation of InGaN nanowires grown on Si substrate by PA-MBE",
abstract = "The influence of the growth time on the structural properties of InGaN nanowires grown on Si substrate by plasma-assisted molecular beam epitaxy are studied. Under appropriate other growth conditions, the growth for 2h leads to the formation of separated nanowires, whereas the growth for 2h 30min and 3h leads to the formation of nanostructures such as nano-umbrellas. The separated NWs exhibit a photoluminescence spectrum with maxima at about 590 nm, whereas the nano-umbrellas show two pronounced photoluminescence lines at 421 and 619 nm.",
author = "Gridchin, {V. O.} and Dragunova, {A. S.} and Kotlyar, {K. P.} and Reznik, {R. R.} and Komarov, {S. D.} and Kryzhanovskaya, {N. V.} and Soshnikov, {I. P.} and Samsonenko, {Y. B.} and Cirlin, {G. E.}",
note = "Publisher Copyright: {\textcopyright} 2021 Institute of Physics Publishing. All rights reserved.; 8th International School and Conference {"}Saint Petersburg OPEN 2021{"} on Optoelectronics, Photonics, Engineering and Nanostructures, SPbOPEN 2021 ; Conference date: 25-05-2021 Through 28-05-2021",
year = "2021",
month = dec,
day = "6",
doi = "10.1088/1742-6596/2086/1/012013",
language = "English",
volume = "2086",
journal = "Journal of Physics: Conference Series",
issn = "1742-6588",
publisher = "IOP Publishing Ltd.",
number = "1",

}

RIS

TY - JOUR

T1 - Morphology transformation of InGaN nanowires grown on Si substrate by PA-MBE

AU - Gridchin, V. O.

AU - Dragunova, A. S.

AU - Kotlyar, K. P.

AU - Reznik, R. R.

AU - Komarov, S. D.

AU - Kryzhanovskaya, N. V.

AU - Soshnikov, I. P.

AU - Samsonenko, Y. B.

AU - Cirlin, G. E.

N1 - Publisher Copyright: © 2021 Institute of Physics Publishing. All rights reserved.

PY - 2021/12/6

Y1 - 2021/12/6

N2 - The influence of the growth time on the structural properties of InGaN nanowires grown on Si substrate by plasma-assisted molecular beam epitaxy are studied. Under appropriate other growth conditions, the growth for 2h leads to the formation of separated nanowires, whereas the growth for 2h 30min and 3h leads to the formation of nanostructures such as nano-umbrellas. The separated NWs exhibit a photoluminescence spectrum with maxima at about 590 nm, whereas the nano-umbrellas show two pronounced photoluminescence lines at 421 and 619 nm.

AB - The influence of the growth time on the structural properties of InGaN nanowires grown on Si substrate by plasma-assisted molecular beam epitaxy are studied. Under appropriate other growth conditions, the growth for 2h leads to the formation of separated nanowires, whereas the growth for 2h 30min and 3h leads to the formation of nanostructures such as nano-umbrellas. The separated NWs exhibit a photoluminescence spectrum with maxima at about 590 nm, whereas the nano-umbrellas show two pronounced photoluminescence lines at 421 and 619 nm.

UR - http://www.scopus.com/inward/record.url?scp=85122390492&partnerID=8YFLogxK

U2 - 10.1088/1742-6596/2086/1/012013

DO - 10.1088/1742-6596/2086/1/012013

M3 - Conference article

AN - SCOPUS:85122390492

VL - 2086

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

SN - 1742-6588

IS - 1

M1 - 012013

T2 - 8th International School and Conference "Saint Petersburg OPEN 2021" on Optoelectronics, Photonics, Engineering and Nanostructures, SPbOPEN 2021

Y2 - 25 May 2021 through 28 May 2021

ER -

ID: 96851574