Результаты исследований: Научные публикации в периодических изданиях › статья в журнале по материалам конференции › Рецензирование
Morphology transformation of InGaN nanowires grown on Si substrate by PA-MBE. / Gridchin, V. O.; Dragunova, A. S.; Kotlyar, K. P.; Reznik, R. R.; Komarov, S. D.; Kryzhanovskaya, N. V.; Soshnikov, I. P.; Samsonenko, Y. B.; Cirlin, G. E.
в: Journal of Physics: Conference Series, Том 2086, № 1, 012013, 06.12.2021.Результаты исследований: Научные публикации в периодических изданиях › статья в журнале по материалам конференции › Рецензирование
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TY - JOUR
T1 - Morphology transformation of InGaN nanowires grown on Si substrate by PA-MBE
AU - Gridchin, V. O.
AU - Dragunova, A. S.
AU - Kotlyar, K. P.
AU - Reznik, R. R.
AU - Komarov, S. D.
AU - Kryzhanovskaya, N. V.
AU - Soshnikov, I. P.
AU - Samsonenko, Y. B.
AU - Cirlin, G. E.
N1 - Publisher Copyright: © 2021 Institute of Physics Publishing. All rights reserved.
PY - 2021/12/6
Y1 - 2021/12/6
N2 - The influence of the growth time on the structural properties of InGaN nanowires grown on Si substrate by plasma-assisted molecular beam epitaxy are studied. Under appropriate other growth conditions, the growth for 2h leads to the formation of separated nanowires, whereas the growth for 2h 30min and 3h leads to the formation of nanostructures such as nano-umbrellas. The separated NWs exhibit a photoluminescence spectrum with maxima at about 590 nm, whereas the nano-umbrellas show two pronounced photoluminescence lines at 421 and 619 nm.
AB - The influence of the growth time on the structural properties of InGaN nanowires grown on Si substrate by plasma-assisted molecular beam epitaxy are studied. Under appropriate other growth conditions, the growth for 2h leads to the formation of separated nanowires, whereas the growth for 2h 30min and 3h leads to the formation of nanostructures such as nano-umbrellas. The separated NWs exhibit a photoluminescence spectrum with maxima at about 590 nm, whereas the nano-umbrellas show two pronounced photoluminescence lines at 421 and 619 nm.
UR - http://www.scopus.com/inward/record.url?scp=85122390492&partnerID=8YFLogxK
U2 - 10.1088/1742-6596/2086/1/012013
DO - 10.1088/1742-6596/2086/1/012013
M3 - Conference article
AN - SCOPUS:85122390492
VL - 2086
JO - Journal of Physics: Conference Series
JF - Journal of Physics: Conference Series
SN - 1742-6588
IS - 1
M1 - 012013
T2 - 8th International School and Conference "Saint Petersburg OPEN 2021" on Optoelectronics, Photonics, Engineering and Nanostructures, SPbOPEN 2021
Y2 - 25 May 2021 through 28 May 2021
ER -
ID: 96851574