DOI

The influence of the growth time on the structural properties of InGaN nanowires grown on Si substrate by plasma-assisted molecular beam epitaxy are studied. Under appropriate other growth conditions, the growth for 2h leads to the formation of separated nanowires, whereas the growth for 2h 30min and 3h leads to the formation of nanostructures such as nano-umbrellas. The separated NWs exhibit a photoluminescence spectrum with maxima at about 590 nm, whereas the nano-umbrellas show two pronounced photoluminescence lines at 421 and 619 nm.

Язык оригиналаанглийский
Номер статьи012013
ЖурналJournal of Physics: Conference Series
Том2086
Номер выпуска1
DOI
СостояниеОпубликовано - 6 дек 2021
Событие8th International School and Conference "Saint Petersburg OPEN 2021" on Optoelectronics, Photonics, Engineering and Nanostructures, SPbOPEN 2021 - Saint Petersburg, Российская Федерация
Продолжительность: 25 мая 202128 мая 2021

    Предметные области Scopus

  • Физика и астрономия (все)

ID: 96851574