Molecular-Beam Epitaxy Growth and Properties of AlGaAs Nanowires with InGaAs Nanostructures

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Molecular-Beam Epitaxy Growth and Properties of AlGaAs Nanowires with InGaAs Nanostructures. / Reznik, Rodion R.; Ilkiv, Igor V.; Kotlyar, Konstantin P.; Gridchin, Vladislav O.; Bondarenko, Dariya N.; Lendyashova, Vera V.; Ubyivovk, Evgenii V.; Dragunova, Anna S.; Kryzhanovskaya, Natalia V.; Cirlin, George E.

в: Physica Status Solidi - Rapid Research Letters, Том 16, № 7, 2200056, 07.2022.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Author

Reznik, Rodion R. ; Ilkiv, Igor V. ; Kotlyar, Konstantin P. ; Gridchin, Vladislav O. ; Bondarenko, Dariya N. ; Lendyashova, Vera V. ; Ubyivovk, Evgenii V. ; Dragunova, Anna S. ; Kryzhanovskaya, Natalia V. ; Cirlin, George E. / Molecular-Beam Epitaxy Growth and Properties of AlGaAs Nanowires with InGaAs Nanostructures. в: Physica Status Solidi - Rapid Research Letters. 2022 ; Том 16, № 7.

BibTeX

@article{66c8b2ae75cd44439203d6d1d9a5bec4,

title = "Molecular-Beam Epitaxy Growth and Properties of AlGaAs Nanowires with InGaAs Nanostructures",

abstract = "Combinations of III–V nanowires (NWs) with quantum dots (QDs) are promising building blocks for quantum light sources. Herein, for the first time, the results of growing AlGaAs NWs with InGaAs QDs by molecular-beam epitaxy on a silicon substrate are shown. The optimal growth temperature is determined and the physical properties of the grown nanostructures are studied. It is shown that the grown nanostructures exhibit photoluminescence (PL) signal up to room temperature in a wide wavelength range, including 1.3 μm emission which is important for the optical fiber transmission. It is found that in addition to InGaAs QDs radial InGaAs quantum wells are formed inside the NWs as a result of lateral/axial InGaAs growth competition. The proposed technology opens up new possibilities for the integration of direct-band III–V materials with the silicon platform for various applications in the field of silicon photonics and quantum communication technology.",

keywords = "III–V semiconductors, molecular-beam epitaxy, nanowires, quantum dots, silicon, III–V semiconductors, molecular-beam epitaxy, nanowires, quantum dots, silicon",

author = "Reznik, {Rodion R.} and Ilkiv, {Igor V.} and Kotlyar, {Konstantin P.} and Gridchin, {Vladislav O.} and Bondarenko, {Dariya N.} and Lendyashova, {Vera V.} and Ubyivovk, {Evgenii V.} and Dragunova, {Anna S.} and Kryzhanovskaya, {Natalia V.} and Cirlin, {George E.}",

note = "Publisher Copyright: {\textcopyright} 2022 Wiley-VCH GmbH.",

year = "2022",

month = jul,

doi = "10.1002/pssr.202200056",

language = "English",

volume = "16",

journal = "Physica Status Solidi - Rapid Research Letetrs",

issn = "1862-6254",

publisher = "Wiley-Blackwell",

number = "7",

}

RIS

TY - JOUR

T1 - Molecular-Beam Epitaxy Growth and Properties of AlGaAs Nanowires with InGaAs Nanostructures

AU - Reznik, Rodion R.

AU - Ilkiv, Igor V.

AU - Kotlyar, Konstantin P.

AU - Gridchin, Vladislav O.

AU - Bondarenko, Dariya N.

AU - Lendyashova, Vera V.

AU - Ubyivovk, Evgenii V.

AU - Dragunova, Anna S.

AU - Kryzhanovskaya, Natalia V.

AU - Cirlin, George E.

PY - 2022/7

Y1 - 2022/7

N2 - Combinations of III–V nanowires (NWs) with quantum dots (QDs) are promising building blocks for quantum light sources. Herein, for the first time, the results of growing AlGaAs NWs with InGaAs QDs by molecular-beam epitaxy on a silicon substrate are shown. The optimal growth temperature is determined and the physical properties of the grown nanostructures are studied. It is shown that the grown nanostructures exhibit photoluminescence (PL) signal up to room temperature in a wide wavelength range, including 1.3 μm emission which is important for the optical fiber transmission. It is found that in addition to InGaAs QDs radial InGaAs quantum wells are formed inside the NWs as a result of lateral/axial InGaAs growth competition. The proposed technology opens up new possibilities for the integration of direct-band III–V materials with the silicon platform for various applications in the field of silicon photonics and quantum communication technology.

AB - Combinations of III–V nanowires (NWs) with quantum dots (QDs) are promising building blocks for quantum light sources. Herein, for the first time, the results of growing AlGaAs NWs with InGaAs QDs by molecular-beam epitaxy on a silicon substrate are shown. The optimal growth temperature is determined and the physical properties of the grown nanostructures are studied. It is shown that the grown nanostructures exhibit photoluminescence (PL) signal up to room temperature in a wide wavelength range, including 1.3 μm emission which is important for the optical fiber transmission. It is found that in addition to InGaAs QDs radial InGaAs quantum wells are formed inside the NWs as a result of lateral/axial InGaAs growth competition. The proposed technology opens up new possibilities for the integration of direct-band III–V materials with the silicon platform for various applications in the field of silicon photonics and quantum communication technology.

KW - III–V semiconductors

KW - molecular-beam epitaxy

KW - nanowires

KW - quantum dots

KW - silicon

KW - III–V semiconductors

KW - molecular-beam epitaxy

KW - nanowires

KW - quantum dots

KW - silicon

UR - http://www.scopus.com/inward/record.url?scp=85128869698&partnerID=8YFLogxK

UR - https://www.mendeley.com/catalogue/3c117419-8e4f-386d-829f-b367e58c8603/

U2 - 10.1002/pssr.202200056

DO - 10.1002/pssr.202200056

M3 - Article

AN - SCOPUS:85128869698

VL - 16

JO - Physica Status Solidi - Rapid Research Letetrs

JF - Physica Status Solidi - Rapid Research Letetrs

SN - 1862-6254

IS - 7

M1 - 2200056

ER -

ID: 94918545