MBE synthesis and properties of GaN NWs on SiC/Si substrate and InGaN nanostructures on Si substrate

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MBE synthesis and properties of GaN NWs on SiC/Si substrate and InGaN nanostructures on Si substrate. / Reznik, R. R.; Kotlyar, K. P.; Khrebtov, A. I.; Kukushkin, S. A.; Kryzhanovskaya, N. V.; Cirlin, G. E.

в: Journal of Physics: Conference Series, Том 1537, № 1, 012003, 22.06.2020.

Результаты исследований: Научные публикации в периодических изданиях › статья в журнале по материалам конференции › Рецензирование

BibTeX

@article{736ec0f924ec4a44bfcd39a4e3a2d3e5,

title = "MBE synthesis and properties of GaN NWs on SiC/Si substrate and InGaN nanostructures on Si substrate",

abstract = "A possibility of GaN NWs and InGaN nanostructures of a branched morphology MBE growth on SiC/Si and Si substrate has been demonstrated. It was found that the intensity of the photoluminescence spectrum of the GaN NWs on SiC/Si(111) substrate integrally more than 2 times higher than that of the best structures of GaN NWs without a buffer layer of silicon carbide. The results of morphological studies have shown that InGaN synthesis occurs in several stages. InGaN nanostructures turned out to be optically active at room temperature and have a wide radiation visible range.",

author = "Reznik, {R. R.} and Kotlyar, {K. P.} and Khrebtov, {A. I.} and Kukushkin, {S. A.} and Kryzhanovskaya, {N. V.} and Cirlin, {G. E.}",

note = "Publisher Copyright: {\textcopyright} Published under licence by IOP Publishing Ltd.; Smart Nanomaterials 2019: Advances, Innovation and Applications, SNAIA 2019 ; Conference date: 10-12-2019 Through 13-12-2019",

year = "2020",

month = jun,

day = "22",

doi = "10.1088/1742-6596/1537/1/012003",

language = "English",

volume = "1537",

journal = "Journal of Physics: Conference Series",

issn = "1742-6588",

publisher = "IOP Publishing Ltd.",

number = "1",

}

RIS

TY - JOUR

T1 - MBE synthesis and properties of GaN NWs on SiC/Si substrate and InGaN nanostructures on Si substrate

AU - Reznik, R. R.

AU - Kotlyar, K. P.

AU - Khrebtov, A. I.

AU - Kukushkin, S. A.

AU - Kryzhanovskaya, N. V.

AU - Cirlin, G. E.

N1 - Publisher Copyright: © Published under licence by IOP Publishing Ltd.

PY - 2020/6/22

Y1 - 2020/6/22

N2 - A possibility of GaN NWs and InGaN nanostructures of a branched morphology MBE growth on SiC/Si and Si substrate has been demonstrated. It was found that the intensity of the photoluminescence spectrum of the GaN NWs on SiC/Si(111) substrate integrally more than 2 times higher than that of the best structures of GaN NWs without a buffer layer of silicon carbide. The results of morphological studies have shown that InGaN synthesis occurs in several stages. InGaN nanostructures turned out to be optically active at room temperature and have a wide radiation visible range.

AB - A possibility of GaN NWs and InGaN nanostructures of a branched morphology MBE growth on SiC/Si and Si substrate has been demonstrated. It was found that the intensity of the photoluminescence spectrum of the GaN NWs on SiC/Si(111) substrate integrally more than 2 times higher than that of the best structures of GaN NWs without a buffer layer of silicon carbide. The results of morphological studies have shown that InGaN synthesis occurs in several stages. InGaN nanostructures turned out to be optically active at room temperature and have a wide radiation visible range.

UR - http://www.scopus.com/inward/record.url?scp=85089535764&partnerID=8YFLogxK

U2 - 10.1088/1742-6596/1537/1/012003

DO - 10.1088/1742-6596/1537/1/012003

M3 - Conference article

AN - SCOPUS:85089535764

VL - 1537

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

SN - 1742-6588

IS - 1

M1 - 012003

T2 - Smart Nanomaterials 2019: Advances, Innovation and Applications, SNAIA 2019

Y2 - 10 December 2019 through 13 December 2019

ER -

ID: 98505402