A possibility of GaN NWs and InGaN nanostructures of a branched morphology MBE growth on SiC/Si and Si substrate has been demonstrated. It was found that the intensity of the photoluminescence spectrum of the GaN NWs on SiC/Si(111) substrate integrally more than 2 times higher than that of the best structures of GaN NWs without a buffer layer of silicon carbide. The results of morphological studies have shown that InGaN synthesis occurs in several stages. InGaN nanostructures turned out to be optically active at room temperature and have a wide radiation visible range.