Результаты исследований: Научные публикации в периодических изданиях › статья в журнале по материалам конференции › Рецензирование
MBE growth of nanowires using colloidal Ag nanoparticles. / Bouravleuv, A. D.; Ilkiv, I. V.; Reznik, R. R.; Shtrom, I. V.; Khrebtov, A. I.; Samsonenko, Yu B.; Soshnikov, I. P.; Cirlin, G. E.; Lipsanen, H.
в: Journal of Physics: Conference Series, Том 864, № 1, 012010, 15.08.2017.Результаты исследований: Научные публикации в периодических изданиях › статья в журнале по материалам конференции › Рецензирование
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TY - JOUR
T1 - MBE growth of nanowires using colloidal Ag nanoparticles
AU - Bouravleuv, A. D.
AU - Ilkiv, I. V.
AU - Reznik, R. R.
AU - Shtrom, I. V.
AU - Khrebtov, A. I.
AU - Samsonenko, Yu B.
AU - Soshnikov, I. P.
AU - Cirlin, G. E.
AU - Lipsanen, H.
N1 - Funding Information: This work was supported by the grant of the Ministry of Education and Science of Russian Federation (agreement № 14.613.21.0044, unique project identifier RFMEFI61315X0044). I.V. Shtrom and I.V. Ilkiv are grateful for the financial support provided by St.Petersburg State University (grant № 11.37.210.2016).
PY - 2017/8/15
Y1 - 2017/8/15
N2 - Ag colloidal nanoparticles are used as a catalyst for growth of GaAs nanowires by the molecular beam epitaxy on the Si(111) and GaAs(111)B substrate surfaces. The scanning electron microscopy measurements revealed that the nanowire formation occurs in different ways on different substrates, but the parameters of the synthesized nanowires open great prospects for their further use.
AB - Ag colloidal nanoparticles are used as a catalyst for growth of GaAs nanowires by the molecular beam epitaxy on the Si(111) and GaAs(111)B substrate surfaces. The scanning electron microscopy measurements revealed that the nanowire formation occurs in different ways on different substrates, but the parameters of the synthesized nanowires open great prospects for their further use.
UR - http://www.scopus.com/inward/record.url?scp=85028746505&partnerID=8YFLogxK
U2 - 10.1088/1742-6596/864/1/012010
DO - 10.1088/1742-6596/864/1/012010
M3 - Conference article
AN - SCOPUS:85028746505
VL - 864
JO - Journal of Physics: Conference Series
JF - Journal of Physics: Conference Series
SN - 1742-6588
IS - 1
M1 - 012010
T2 - 33rd International Conference on the Physics of Semiconductors, ICPS 2016
Y2 - 31 July 2016 through 5 August 2016
ER -
ID: 99721813