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MBE growth of nanowires using colloidal Ag nanoparticles. / Bouravleuv, A. D.; Ilkiv, I. V.; Reznik, R. R.; Shtrom, I. V.; Khrebtov, A. I.; Samsonenko, Yu B.; Soshnikov, I. P.; Cirlin, G. E.; Lipsanen, H.

In: Journal of Physics: Conference Series, Vol. 864, No. 1, 012010, 15.08.2017.

Research output: Contribution to journalConference articlepeer-review

Harvard

Bouravleuv, AD, Ilkiv, IV, Reznik, RR, Shtrom, IV, Khrebtov, AI, Samsonenko, YB, Soshnikov, IP, Cirlin, GE & Lipsanen, H 2017, 'MBE growth of nanowires using colloidal Ag nanoparticles', Journal of Physics: Conference Series, vol. 864, no. 1, 012010. https://doi.org/10.1088/1742-6596/864/1/012010

APA

Bouravleuv, A. D., Ilkiv, I. V., Reznik, R. R., Shtrom, I. V., Khrebtov, A. I., Samsonenko, Y. B., Soshnikov, I. P., Cirlin, G. E., & Lipsanen, H. (2017). MBE growth of nanowires using colloidal Ag nanoparticles. Journal of Physics: Conference Series, 864(1), [012010]. https://doi.org/10.1088/1742-6596/864/1/012010

Vancouver

Bouravleuv AD, Ilkiv IV, Reznik RR, Shtrom IV, Khrebtov AI, Samsonenko YB et al. MBE growth of nanowires using colloidal Ag nanoparticles. Journal of Physics: Conference Series. 2017 Aug 15;864(1). 012010. https://doi.org/10.1088/1742-6596/864/1/012010

Author

Bouravleuv, A. D. ; Ilkiv, I. V. ; Reznik, R. R. ; Shtrom, I. V. ; Khrebtov, A. I. ; Samsonenko, Yu B. ; Soshnikov, I. P. ; Cirlin, G. E. ; Lipsanen, H. / MBE growth of nanowires using colloidal Ag nanoparticles. In: Journal of Physics: Conference Series. 2017 ; Vol. 864, No. 1.

BibTeX

@article{76269ff5be9d429da936be9ff54fd0cd,
title = "MBE growth of nanowires using colloidal Ag nanoparticles",
abstract = "Ag colloidal nanoparticles are used as a catalyst for growth of GaAs nanowires by the molecular beam epitaxy on the Si(111) and GaAs(111)B substrate surfaces. The scanning electron microscopy measurements revealed that the nanowire formation occurs in different ways on different substrates, but the parameters of the synthesized nanowires open great prospects for their further use.",
author = "Bouravleuv, {A. D.} and Ilkiv, {I. V.} and Reznik, {R. R.} and Shtrom, {I. V.} and Khrebtov, {A. I.} and Samsonenko, {Yu B.} and Soshnikov, {I. P.} and Cirlin, {G. E.} and H. Lipsanen",
note = "Funding Information: This work was supported by the grant of the Ministry of Education and Science of Russian Federation (agreement № 14.613.21.0044, unique project identifier RFMEFI61315X0044). I.V. Shtrom and I.V. Ilkiv are grateful for the financial support provided by St.Petersburg State University (grant № 11.37.210.2016).; 33rd International Conference on the Physics of Semiconductors, ICPS 2016 ; Conference date: 31-07-2016 Through 05-08-2016",
year = "2017",
month = aug,
day = "15",
doi = "10.1088/1742-6596/864/1/012010",
language = "English",
volume = "864",
journal = "Journal of Physics: Conference Series",
issn = "1742-6588",
publisher = "IOP Publishing Ltd.",
number = "1",

}

RIS

TY - JOUR

T1 - MBE growth of nanowires using colloidal Ag nanoparticles

AU - Bouravleuv, A. D.

AU - Ilkiv, I. V.

AU - Reznik, R. R.

AU - Shtrom, I. V.

AU - Khrebtov, A. I.

AU - Samsonenko, Yu B.

AU - Soshnikov, I. P.

AU - Cirlin, G. E.

AU - Lipsanen, H.

N1 - Funding Information: This work was supported by the grant of the Ministry of Education and Science of Russian Federation (agreement № 14.613.21.0044, unique project identifier RFMEFI61315X0044). I.V. Shtrom and I.V. Ilkiv are grateful for the financial support provided by St.Petersburg State University (grant № 11.37.210.2016).

PY - 2017/8/15

Y1 - 2017/8/15

N2 - Ag colloidal nanoparticles are used as a catalyst for growth of GaAs nanowires by the molecular beam epitaxy on the Si(111) and GaAs(111)B substrate surfaces. The scanning electron microscopy measurements revealed that the nanowire formation occurs in different ways on different substrates, but the parameters of the synthesized nanowires open great prospects for their further use.

AB - Ag colloidal nanoparticles are used as a catalyst for growth of GaAs nanowires by the molecular beam epitaxy on the Si(111) and GaAs(111)B substrate surfaces. The scanning electron microscopy measurements revealed that the nanowire formation occurs in different ways on different substrates, but the parameters of the synthesized nanowires open great prospects for their further use.

UR - http://www.scopus.com/inward/record.url?scp=85028746505&partnerID=8YFLogxK

U2 - 10.1088/1742-6596/864/1/012010

DO - 10.1088/1742-6596/864/1/012010

M3 - Conference article

AN - SCOPUS:85028746505

VL - 864

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

SN - 1742-6588

IS - 1

M1 - 012010

T2 - 33rd International Conference on the Physics of Semiconductors, ICPS 2016

Y2 - 31 July 2016 through 5 August 2016

ER -

ID: 99721813