MBE Growth and Structural Properties of GaP and InP Nanowires on a SiC Substrate with a Graphene Layer

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MBE Growth and Structural Properties of GaP and InP Nanowires on a SiC Substrate with a Graphene Layer. / Reznik, R. R.; Kotlyar, K. P.; Ilkiv, I. V.; Soshnikov, I. P.; Lebedev, S. P.; Lebedev, A. A.; Kirilenko, D. A.; Alexeev, P. A.; Cirlin, G. E.

в: Semiconductors, Том 52, № 11, 01.11.2018, стр. 1428-1431.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

BibTeX

@article{53c36e1fb6584799b8467b21f5090d00,

title = "MBE Growth and Structural Properties of GaP and InP Nanowires on a SiC Substrate with a Graphene Layer",

abstract = "Abstract: The possibility in principle of the MBE (molecular-beam epitaxy) growth of GaP and InP nanowires on a SiC substrate with a graphene layer is demonstrated for the first time. InP nanowires on such a substrate have no stacking faults and possess an ideal crystallographic quality. At the same time, GaP nanowires have structural defects of the type of twins and the reversal of crystallographic phases at the top and at the base. The results of structural measurements demonstrate that the nanowires are formed in the wurtzite phase, which is not typical of bulk III–V materials.",

author = "Reznik, {R. R.} and Kotlyar, {K. P.} and Ilkiv, {I. V.} and Soshnikov, {I. P.} and Lebedev, {S. P.} and Lebedev, {A. A.} and Kirilenko, {D. A.} and Alexeev, {P. A.} and Cirlin, {G. E.}",

note = "Publisher Copyright: {\textcopyright} 2018, Pleiades Publishing, Ltd.",

year = "2018",

month = nov,

day = "1",

doi = "10.1134/S1063782618110210",

language = "English",

volume = "52",

pages = "1428--1431",

journal = "Semiconductors",

issn = "1063-7826",

publisher = "МАИК {"}Наука/Интерпериодика{"}",

number = "11",

}

RIS

TY - JOUR

T1 - MBE Growth and Structural Properties of GaP and InP Nanowires on a SiC Substrate with a Graphene Layer

AU - Reznik, R. R.

AU - Kotlyar, K. P.

AU - Ilkiv, I. V.

AU - Soshnikov, I. P.

AU - Lebedev, S. P.

AU - Lebedev, A. A.

AU - Kirilenko, D. A.

AU - Alexeev, P. A.

AU - Cirlin, G. E.

PY - 2018/11/1

Y1 - 2018/11/1

N2 - Abstract: The possibility in principle of the MBE (molecular-beam epitaxy) growth of GaP and InP nanowires on a SiC substrate with a graphene layer is demonstrated for the first time. InP nanowires on such a substrate have no stacking faults and possess an ideal crystallographic quality. At the same time, GaP nanowires have structural defects of the type of twins and the reversal of crystallographic phases at the top and at the base. The results of structural measurements demonstrate that the nanowires are formed in the wurtzite phase, which is not typical of bulk III–V materials.

AB - Abstract: The possibility in principle of the MBE (molecular-beam epitaxy) growth of GaP and InP nanowires on a SiC substrate with a graphene layer is demonstrated for the first time. InP nanowires on such a substrate have no stacking faults and possess an ideal crystallographic quality. At the same time, GaP nanowires have structural defects of the type of twins and the reversal of crystallographic phases at the top and at the base. The results of structural measurements demonstrate that the nanowires are formed in the wurtzite phase, which is not typical of bulk III–V materials.

UR - http://www.scopus.com/inward/record.url?scp=85055256575&partnerID=8YFLogxK

U2 - 10.1134/S1063782618110210

DO - 10.1134/S1063782618110210

M3 - Article

AN - SCOPUS:85055256575

VL - 52

SP - 1428

EP - 1431

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 11

ER -

ID: 98507711