Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
Luminescence Photodynamics of Hybrid-Structured InP/InAsP/InP Nanowires Passivated by a Layer of TOPO-CdSe/ZnS Quantum Dots. / Khrebtov, A. I.; Kulagina, A. S.; Danilov, V. V.; Gromova, E. S.; Skurlov, I. D.; Litvin, A. P.; Reznik, R. R.; Shtrom, I. V.; Cirlin, G. E.
в: Semiconductors, Том 54, № 9, 01.09.2020, стр. 1141-1146.Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
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TY - JOUR
T1 - Luminescence Photodynamics of Hybrid-Structured InP/InAsP/InP Nanowires Passivated by a Layer of TOPO-CdSe/ZnS Quantum Dots
AU - Khrebtov, A. I.
AU - Kulagina, A. S.
AU - Danilov, V. V.
AU - Gromova, E. S.
AU - Skurlov, I. D.
AU - Litvin, A. P.
AU - Reznik, R. R.
AU - Shtrom, I. V.
AU - Cirlin, G. E.
N1 - Publisher Copyright: © 2020, Pleiades Publishing, Ltd.
PY - 2020/9/1
Y1 - 2020/9/1
N2 - Abstract: The results of studies of the decay photodynamics of excited states in a hybrid semiconductor nanostructure formed as an array of InP nanowires with an InAsP nanoinsert that are passivated with a quasi-Langmuir trioctylphosphine oxide (TOPO) layer containing colloidal CdSe/ZnS quantum dots are presented. The luminescence spectra and kinetics of InAsP nanoinserts in the near-infrared region at temperatures of 80 and 293 K are recorded. The formation of the layer of TOPO-CdSe/ZnS quantum dots at the surface of InP/InAsP/InP nanowires brings about an increase in the duration of radiative recombination and the appearance of its dependence on temperature. It is established that, in the synthesized structure, there is a type-II heterojunction at the interface between the InAsP nanoinsert and the InP bulk. The influence of interphase processes on an increase in the duration of emission is discussed.
AB - Abstract: The results of studies of the decay photodynamics of excited states in a hybrid semiconductor nanostructure formed as an array of InP nanowires with an InAsP nanoinsert that are passivated with a quasi-Langmuir trioctylphosphine oxide (TOPO) layer containing colloidal CdSe/ZnS quantum dots are presented. The luminescence spectra and kinetics of InAsP nanoinserts in the near-infrared region at temperatures of 80 and 293 K are recorded. The formation of the layer of TOPO-CdSe/ZnS quantum dots at the surface of InP/InAsP/InP nanowires brings about an increase in the duration of radiative recombination and the appearance of its dependence on temperature. It is established that, in the synthesized structure, there is a type-II heterojunction at the interface between the InAsP nanoinsert and the InP bulk. The influence of interphase processes on an increase in the duration of emission is discussed.
KW - colloidal quantum dots
KW - luminescence
KW - molecular-beam epitaxy
KW - nanowires
UR - http://www.scopus.com/inward/record.url?scp=85090355044&partnerID=8YFLogxK
U2 - 10.1134/S1063782620090158
DO - 10.1134/S1063782620090158
M3 - Article
AN - SCOPUS:85090355044
VL - 54
SP - 1141
EP - 1146
JO - Semiconductors
JF - Semiconductors
SN - 1063-7826
IS - 9
ER -
ID: 98505255