Luminescence Photodynamics of Hybrid-Structured InP/InAsP/InP Nanowires Passivated by a Layer of TOPO-CdSe/ZnS Quantum Dots

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Luminescence Photodynamics of Hybrid-Structured InP/InAsP/InP Nanowires Passivated by a Layer of TOPO-CdSe/ZnS Quantum Dots. / Khrebtov, A. I.; Kulagina, A. S.; Danilov, V. V.; Gromova, E. S.; Skurlov, I. D.; Litvin, A. P.; Reznik, R. R.; Shtrom, I. V.; Cirlin, G. E.

In: Semiconductors, Vol. 54, No. 9, 01.09.2020, p. 1141-1146.

Research output: Contribution to journal › Article › peer-review

BibTeX

@article{366cdcfedac64b719d6981b1cfe24bc7,

title = "Luminescence Photodynamics of Hybrid-Structured InP/InAsP/InP Nanowires Passivated by a Layer of TOPO-CdSe/ZnS Quantum Dots",

abstract = "Abstract: The results of studies of the decay photodynamics of excited states in a hybrid semiconductor nanostructure formed as an array of InP nanowires with an InAsP nanoinsert that are passivated with a quasi-Langmuir trioctylphosphine oxide (TOPO) layer containing colloidal CdSe/ZnS quantum dots are presented. The luminescence spectra and kinetics of InAsP nanoinserts in the near-infrared region at temperatures of 80 and 293 K are recorded. The formation of the layer of TOPO-CdSe/ZnS quantum dots at the surface of InP/InAsP/InP nanowires brings about an increase in the duration of radiative recombination and the appearance of its dependence on temperature. It is established that, in the synthesized structure, there is a type-II heterojunction at the interface between the InAsP nanoinsert and the InP bulk. The influence of interphase processes on an increase in the duration of emission is discussed.",

keywords = "colloidal quantum dots, luminescence, molecular-beam epitaxy, nanowires",

author = "Khrebtov, {A. I.} and Kulagina, {A. S.} and Danilov, {V. V.} and Gromova, {E. S.} and Skurlov, {I. D.} and Litvin, {A. P.} and Reznik, {R. R.} and Shtrom, {I. V.} and Cirlin, {G. E.}",

note = "Publisher Copyright: {\textcopyright} 2020, Pleiades Publishing, Ltd.",

year = "2020",

month = sep,

day = "1",

doi = "10.1134/S1063782620090158",

language = "English",

volume = "54",

pages = "1141--1146",

journal = "Semiconductors",

issn = "1063-7826",

publisher = "МАИК {"}Наука/Интерпериодика{"}",

number = "9",

}

RIS

TY - JOUR

T1 - Luminescence Photodynamics of Hybrid-Structured InP/InAsP/InP Nanowires Passivated by a Layer of TOPO-CdSe/ZnS Quantum Dots

AU - Khrebtov, A. I.

AU - Kulagina, A. S.

AU - Danilov, V. V.

AU - Gromova, E. S.

AU - Skurlov, I. D.

AU - Litvin, A. P.

AU - Reznik, R. R.

AU - Shtrom, I. V.

AU - Cirlin, G. E.

PY - 2020/9/1

Y1 - 2020/9/1

N2 - Abstract: The results of studies of the decay photodynamics of excited states in a hybrid semiconductor nanostructure formed as an array of InP nanowires with an InAsP nanoinsert that are passivated with a quasi-Langmuir trioctylphosphine oxide (TOPO) layer containing colloidal CdSe/ZnS quantum dots are presented. The luminescence spectra and kinetics of InAsP nanoinserts in the near-infrared region at temperatures of 80 and 293 K are recorded. The formation of the layer of TOPO-CdSe/ZnS quantum dots at the surface of InP/InAsP/InP nanowires brings about an increase in the duration of radiative recombination and the appearance of its dependence on temperature. It is established that, in the synthesized structure, there is a type-II heterojunction at the interface between the InAsP nanoinsert and the InP bulk. The influence of interphase processes on an increase in the duration of emission is discussed.

AB - Abstract: The results of studies of the decay photodynamics of excited states in a hybrid semiconductor nanostructure formed as an array of InP nanowires with an InAsP nanoinsert that are passivated with a quasi-Langmuir trioctylphosphine oxide (TOPO) layer containing colloidal CdSe/ZnS quantum dots are presented. The luminescence spectra and kinetics of InAsP nanoinserts in the near-infrared region at temperatures of 80 and 293 K are recorded. The formation of the layer of TOPO-CdSe/ZnS quantum dots at the surface of InP/InAsP/InP nanowires brings about an increase in the duration of radiative recombination and the appearance of its dependence on temperature. It is established that, in the synthesized structure, there is a type-II heterojunction at the interface between the InAsP nanoinsert and the InP bulk. The influence of interphase processes on an increase in the duration of emission is discussed.

KW - colloidal quantum dots

KW - luminescence

KW - molecular-beam epitaxy

KW - nanowires

UR - http://www.scopus.com/inward/record.url?scp=85090355044&partnerID=8YFLogxK

U2 - 10.1134/S1063782620090158

DO - 10.1134/S1063782620090158

M3 - Article

AN - SCOPUS:85090355044

VL - 54

SP - 1141

EP - 1146

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 9

ER -

ID: 98505255