Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
Abstract: The results of studies of the decay photodynamics of excited states in a hybrid semiconductor nanostructure formed as an array of InP nanowires with an InAsP nanoinsert that are passivated with a quasi-Langmuir trioctylphosphine oxide (TOPO) layer containing colloidal CdSe/ZnS quantum dots are presented. The luminescence spectra and kinetics of InAsP nanoinserts in the near-infrared region at temperatures of 80 and 293 K are recorded. The formation of the layer of TOPO-CdSe/ZnS quantum dots at the surface of InP/InAsP/InP nanowires brings about an increase in the duration of radiative recombination and the appearance of its dependence on temperature. It is established that, in the synthesized structure, there is a type-II heterojunction at the interface between the InAsP nanoinsert and the InP bulk. The influence of interphase processes on an increase in the duration of emission is discussed.
Язык оригинала | английский |
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Страницы (с-по) | 1141-1146 |
Число страниц | 6 |
Журнал | Semiconductors |
Том | 54 |
Номер выпуска | 9 |
DOI | |
Состояние | Опубликовано - 1 сен 2020 |
ID: 98505255