Instantaneous growth of single monolayers as the origin of spontaneous core-shell InxGa1−xN nanowires with bright red photoluminescence

Standard

Instantaneous growth of single monolayers as the origin of spontaneous core-shell InxGa1−xN nanowires with bright red photoluminescence. / Dubrovskii, V.G.; Cirlin, G.E.; Kirilenko, D.A.; Kotlyar, K.P.; Makhov, I.S.; Reznik, R.R.; Gridchin, V.O.

в: Nanoscale Horizons, 2024.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

BibTeX

@article{545ca4e92b474a73b5564c2cdb0fa97f,

title = "Instantaneous growth of single monolayers as the origin of spontaneous core-shell InxGa1−xN nanowires with bright red photoluminescence",

abstract = "Increasing the InN content in the InxGa1−xN compound is paramount for optoelectronic applications. It has been demonstrated in homogeneous nanowires or deliberately grown nanowire heterostructures. Here, we present spontaneous core-shell InxGa1−xN nanowires grown by molecular beam epitaxy on Si substrates at 625 °C. These heterostructures have a high InN fraction in the cores around 0.4 and sharp interfaces, and exhibit bright photoluminescence at 650 nm. The surprising effect of material separation is attributed to the periodically changing environment for instantaneous growth of single monolayers on top of nanowires. Due to a smaller collection length of N adatoms, each monolayer nucleates under a balanced V/III ratio, but then continues under highly group III rich conditions. As a result, the miscibility gap is suppressed in the cores but remains in the shells. These results provide a simple method for obtaining high-quality InGaN heterostructures emitting in the extended wavelength range. {\textcopyright} 2024 The Royal Society of Chemistry.",

keywords = "Gallium alloys, Gallium compounds, III-V semiconductors, Indium alloys, Indium compounds, Molecular beam epitaxy, Monolayers, Core shell, Effects of materials, Materials separations, Molecular-beam epitaxy, N-compounds, Nanowire heterostructures, Optoelectronic applications, Red photoluminescence, Sharp interface, Si substrates, Nanowires",

author = "V.G. Dubrovskii and G.E. Cirlin and D.A. Kirilenko and K.P. Kotlyar and I.S. Makhov and R.R. Reznik and V.O. Gridchin",

note = "Export Date: 4 November 2024 Сведения о финансировании: Russian Science Foundation, RSF, 23-79-00012 Сведения о финансировании: Russian Science Foundation, RSF Сведения о финансировании: Ministry of Education and Science of the Russian Federation, Minobrnauka, 0791-2023-0004 Сведения о финансировании: Ministry of Education and Science of the Russian Federation, Minobrnauka Сведения о финансировании: Saint Petersburg State University, SPbU, 95440344 Сведения о финансировании: Saint Petersburg State University, SPbU Текст о финансировании 1: Growth experiments and optical measurements were carried out with financial support of the Russian Science Foundation (Project No. 23-79-00012). Structural properties were studied under the support of the Ministry of Science and Higher Education of the Russian Federation (State task No. 0791-2023-0004). VGD gratefully acknowledges the research grant of St. Petersburg State University (ID 95440344) for financial support of modeling. PL studies were carried out using the equipment of the large-scale research facility \u201CComplex optoelectronic stand\u201D.",

year = "2024",

doi = "10.1039/d4nh00412d",

language = "Английский",

journal = "Nanoscale Horizons",

issn = "2055-6756",

publisher = "Royal Society of Chemistry",

}

RIS

TY - JOUR

T1 - Instantaneous growth of single monolayers as the origin of spontaneous core-shell InxGa1−xN nanowires with bright red photoluminescence

AU - Dubrovskii, V.G.

AU - Cirlin, G.E.

AU - Kirilenko, D.A.

AU - Kotlyar, K.P.

AU - Makhov, I.S.

AU - Reznik, R.R.

AU - Gridchin, V.O.

N1 - Export Date: 4 November 2024 Сведения о финансировании: Russian Science Foundation, RSF, 23-79-00012 Сведения о финансировании: Russian Science Foundation, RSF Сведения о финансировании: Ministry of Education and Science of the Russian Federation, Minobrnauka, 0791-2023-0004 Сведения о финансировании: Ministry of Education and Science of the Russian Federation, Minobrnauka Сведения о финансировании: Saint Petersburg State University, SPbU, 95440344 Сведения о финансировании: Saint Petersburg State University, SPbU Текст о финансировании 1: Growth experiments and optical measurements were carried out with financial support of the Russian Science Foundation (Project No. 23-79-00012). Structural properties were studied under the support of the Ministry of Science and Higher Education of the Russian Federation (State task No. 0791-2023-0004). VGD gratefully acknowledges the research grant of St. Petersburg State University (ID 95440344) for financial support of modeling. PL studies were carried out using the equipment of the large-scale research facility \u201CComplex optoelectronic stand\u201D.

PY - 2024

Y1 - 2024

N2 - Increasing the InN content in the InxGa1−xN compound is paramount for optoelectronic applications. It has been demonstrated in homogeneous nanowires or deliberately grown nanowire heterostructures. Here, we present spontaneous core-shell InxGa1−xN nanowires grown by molecular beam epitaxy on Si substrates at 625 °C. These heterostructures have a high InN fraction in the cores around 0.4 and sharp interfaces, and exhibit bright photoluminescence at 650 nm. The surprising effect of material separation is attributed to the periodically changing environment for instantaneous growth of single monolayers on top of nanowires. Due to a smaller collection length of N adatoms, each monolayer nucleates under a balanced V/III ratio, but then continues under highly group III rich conditions. As a result, the miscibility gap is suppressed in the cores but remains in the shells. These results provide a simple method for obtaining high-quality InGaN heterostructures emitting in the extended wavelength range. © 2024 The Royal Society of Chemistry.

AB - Increasing the InN content in the InxGa1−xN compound is paramount for optoelectronic applications. It has been demonstrated in homogeneous nanowires or deliberately grown nanowire heterostructures. Here, we present spontaneous core-shell InxGa1−xN nanowires grown by molecular beam epitaxy on Si substrates at 625 °C. These heterostructures have a high InN fraction in the cores around 0.4 and sharp interfaces, and exhibit bright photoluminescence at 650 nm. The surprising effect of material separation is attributed to the periodically changing environment for instantaneous growth of single monolayers on top of nanowires. Due to a smaller collection length of N adatoms, each monolayer nucleates under a balanced V/III ratio, but then continues under highly group III rich conditions. As a result, the miscibility gap is suppressed in the cores but remains in the shells. These results provide a simple method for obtaining high-quality InGaN heterostructures emitting in the extended wavelength range. © 2024 The Royal Society of Chemistry.

KW - Gallium alloys

KW - Gallium compounds

KW - III-V semiconductors

KW - Indium alloys

KW - Indium compounds

KW - Molecular beam epitaxy

KW - Monolayers

KW - Core shell

KW - Effects of materials

KW - Materials separations

KW - Molecular-beam epitaxy

KW - N-compounds

KW - Nanowire heterostructures

KW - Optoelectronic applications

KW - Red photoluminescence

KW - Sharp interface

KW - Si substrates

KW - Nanowires

UR - https://www.mendeley.com/catalogue/45000819-ab6c-35c5-a34c-7224a62f4b88/

U2 - 10.1039/d4nh00412d

DO - 10.1039/d4nh00412d

M3 - статья

JO - Nanoscale Horizons

JF - Nanoscale Horizons

SN - 2055-6756

ER -

ID: 126694079