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The use of SiC/Si(111) hybrid substrate for MBE growth of GaN nanowires. / Reznik, R. R.; Kotlyar, K. P.; Ilkiv, I. V.; Soshnikov, I. P.; Kukushkin, S. A.; Osipov, A. V.; Nikitina, E. V.; Cirlin, G. E.

в: Journal of Physics: Conference Series, Том 741, № 1, 012027, 15.09.2016.

Результаты исследований: Научные публикации в периодических изданиях › статья в журнале по материалам конференции › Рецензирование

Harvard

Reznik, RR, Kotlyar, KP, Ilkiv, IV, Soshnikov, IP, Kukushkin, SA, Osipov, AV, Nikitina, EV & Cirlin, GE 2016, 'The use of SiC/Si(111) hybrid substrate for MBE growth of GaN nanowires', Journal of Physics: Conference Series, Том. 741, № 1, 012027. https://doi.org/10.1088/1742-6596/741/1/012027

APA

Reznik, R. R., Kotlyar, K. P., Ilkiv, I. V., Soshnikov, I. P., Kukushkin, S. A., Osipov, A. V., Nikitina, E. V., & Cirlin, G. E. (2016). The use of SiC/Si(111) hybrid substrate for MBE growth of GaN nanowires. Journal of Physics: Conference Series, 741(1), [012027]. https://doi.org/10.1088/1742-6596/741/1/012027

Vancouver

Reznik RR, Kotlyar KP, Ilkiv IV, Soshnikov IP, Kukushkin SA, Osipov AV и пр. The use of SiC/Si(111) hybrid substrate for MBE growth of GaN nanowires. Journal of Physics: Conference Series. 2016 Сент. 15;741(1). 012027. https://doi.org/10.1088/1742-6596/741/1/012027

Author

Reznik, R. R. ; Kotlyar, K. P. ; Ilkiv, I. V. ; Soshnikov, I. P. ; Kukushkin, S. A. ; Osipov, A. V. ; Nikitina, E. V. ; Cirlin, G. E. / The use of SiC/Si(111) hybrid substrate for MBE growth of GaN nanowires. в: Journal of Physics: Conference Series. 2016 ; Том 741, № 1.

BibTeX

@article{6d3559df86b94b61ad71f37853208cb2,
title = "The use of SiC/Si(111) hybrid substrate for MBE growth of GaN nanowires",
abstract = "This work demonstrates the possibility of using a silicon substrate with nanoscale buffer layer of silicon carbide for growth of GaN nanowires by molecular epitaxy on. Morphological and optical properties of the grown arrays are studied. It is shown that the integral intensity of the photoluminescence of such structures is more than 2 times higher than the best NWs GaN structures without buffer layer of silicon carbide.",
author = "Reznik, {R. R.} and Kotlyar, {K. P.} and Ilkiv, {I. V.} and Soshnikov, {I. P.} and Kukushkin, {S. A.} and Osipov, {A. V.} and Nikitina, {E. V.} and Cirlin, {G. E.}",
note = "Publisher Copyright: {\textcopyright} Published under licence by IOP Publishing Ltd.; 3rd International School and Conference on Optoelectronics, Photonics, Engineering and Nanostructures, Saint Petersburg OPEN 2016 ; Conference date: 28-03-2016 Through 30-03-2016",
year = "2016",
month = sep,
day = "15",
doi = "10.1088/1742-6596/741/1/012027",
language = "English",
volume = "741",
journal = "Journal of Physics: Conference Series",
issn = "1742-6588",
publisher = "IOP Publishing Ltd.",
number = "1",

}

RIS

TY - JOUR

T1 - The use of SiC/Si(111) hybrid substrate for MBE growth of GaN nanowires

AU - Reznik, R. R.

AU - Kotlyar, K. P.

AU - Ilkiv, I. V.

AU - Soshnikov, I. P.

AU - Kukushkin, S. A.

AU - Osipov, A. V.

AU - Nikitina, E. V.

AU - Cirlin, G. E.

N1 - Publisher Copyright: © Published under licence by IOP Publishing Ltd.

PY - 2016/9/15

Y1 - 2016/9/15

N2 - This work demonstrates the possibility of using a silicon substrate with nanoscale buffer layer of silicon carbide for growth of GaN nanowires by molecular epitaxy on. Morphological and optical properties of the grown arrays are studied. It is shown that the integral intensity of the photoluminescence of such structures is more than 2 times higher than the best NWs GaN structures without buffer layer of silicon carbide.

AB - This work demonstrates the possibility of using a silicon substrate with nanoscale buffer layer of silicon carbide for growth of GaN nanowires by molecular epitaxy on. Morphological and optical properties of the grown arrays are studied. It is shown that the integral intensity of the photoluminescence of such structures is more than 2 times higher than the best NWs GaN structures without buffer layer of silicon carbide.

UR - http://www.scopus.com/inward/record.url?scp=84989288209&partnerID=8YFLogxK

U2 - 10.1088/1742-6596/741/1/012027

DO - 10.1088/1742-6596/741/1/012027

M3 - Conference article

AN - SCOPUS:84989288209

VL - 741

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

SN - 1742-6588

IS - 1

M1 - 012027

T2 - 3rd International School and Conference on Optoelectronics, Photonics, Engineering and Nanostructures, Saint Petersburg OPEN 2016

Y2 - 28 March 2016 through 30 March 2016

ER -

ID: 99723391