TY - JOUR

T1 - Synthesis of silicon carbide in a matrix of graphite-like carbon prepared via carbonization of rigid-rod polyimide Langmuir–Blodgett films on silicon substrate

AU - Goloudina, Svetlana

AU - Pasyuta, Vyacheslav

AU - Kirilenko, Demid

AU - Smirnov, Aleksandr

AU - Kasatkin, Igor

AU - Zhizhin, Evgeny

AU - Koroleva, Aleksandra

AU - Sevostiyanov, Evgeny

AU - Panov, Mikhail

AU - Trushlyakova, Valentina

AU - Gofman, Iosif

AU - Svetlichnyi, Valentin

AU - Luchinin, Viktor

PY - 2024/4/9

Y1 - 2024/4/9

N2 - Silicon carbide (SiC) is a wide-band gap semiconductor that exceeds other semiconducting materials (except diamond) in electrical, mechanical, chemical, and radiation stability. In this paper, we report a novel approach to fabrication of SiC nano films on a Si substrate, which is based on the endotaxial growth of a SiC crystalline phase in a graphite-like carbon (GLC) matrix. GLC films were formed by carbonization of rigid rod polyimide (PI) Langmuir–Blodgett (LB) films on a Si substrate at 1000 °C in vacuum. After rapid thermal annealing of GLC films at 1100 °C and 1200 °C, new types of heterostructures SiC(10 nm)/GLC(20 nm)/Si(111) and SiC(20 nm)/GLC(15 nm)/SiC(10 nm)/Si(111) were obtained. The SiC top layer was formed due to the Si-containing gas phase present above the surface of GLC film. An advantage of the proposed method of endotaxy is that the SiC crystalline phase is formed within the volume of the GLC film of a thickness predetermined by using PI LB films with different numbers of monolayers for carbonization. This approach allows growing SiC layers close to the 2D state, which is promising for optoelectronics, photovoltaics, spintronics.

AB - Silicon carbide (SiC) is a wide-band gap semiconductor that exceeds other semiconducting materials (except diamond) in electrical, mechanical, chemical, and radiation stability. In this paper, we report a novel approach to fabrication of SiC nano films on a Si substrate, which is based on the endotaxial growth of a SiC crystalline phase in a graphite-like carbon (GLC) matrix. GLC films were formed by carbonization of rigid rod polyimide (PI) Langmuir–Blodgett (LB) films on a Si substrate at 1000 °C in vacuum. After rapid thermal annealing of GLC films at 1100 °C and 1200 °C, new types of heterostructures SiC(10 nm)/GLC(20 nm)/Si(111) and SiC(20 nm)/GLC(15 nm)/SiC(10 nm)/Si(111) were obtained. The SiC top layer was formed due to the Si-containing gas phase present above the surface of GLC film. An advantage of the proposed method of endotaxy is that the SiC crystalline phase is formed within the volume of the GLC film of a thickness predetermined by using PI LB films with different numbers of monolayers for carbonization. This approach allows growing SiC layers close to the 2D state, which is promising for optoelectronics, photovoltaics, spintronics.

KW - Langmuir-Blodgett

KW - SiC films

KW - carbonization

KW - graphite-like carbon

KW - polyimide

UR - https://www.mendeley.com/catalogue/9c5da6d5-33eb-3999-9500-14a3277bf8b1/

U2 - 10.1088/1361-6528/ad373f

DO - 10.1088/1361-6528/ad373f

M3 - Article

VL - 35

JO - Nanotechnology

JF - Nanotechnology

SN - 0957-4484

IS - 26

M1 - 265603

ER -