Research output: Contribution to journal › Article › peer-review
Synthesis of silicon carbide in a matrix of graphite-like carbon prepared via carbonization of rigid-rod polyimide Langmuir–Blodgett films on silicon substrate. / Goloudina, Svetlana; Pasyuta, Vyacheslav; Kirilenko, Demid; Smirnov, Aleksandr; Kasatkin, Igor; Zhizhin, Evgeny; Koroleva, Aleksandra; Sevostiyanov, Evgeny; Panov, Mikhail; Trushlyakova, Valentina; Gofman, Iosif; Svetlichnyi, Valentin; Luchinin, Viktor.
In: Nanotechnology, Vol. 35, No. 26, 265603, 09.04.2024.Research output: Contribution to journal › Article › peer-review
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TY - JOUR
T1 - Synthesis of silicon carbide in a matrix of graphite-like carbon prepared via carbonization of rigid-rod polyimide Langmuir–Blodgett films on silicon substrate
AU - Goloudina, Svetlana
AU - Pasyuta, Vyacheslav
AU - Kirilenko, Demid
AU - Smirnov, Aleksandr
AU - Kasatkin, Igor
AU - Zhizhin, Evgeny
AU - Koroleva, Aleksandra
AU - Sevostiyanov, Evgeny
AU - Panov, Mikhail
AU - Trushlyakova, Valentina
AU - Gofman, Iosif
AU - Svetlichnyi, Valentin
AU - Luchinin, Viktor
PY - 2024/4/9
Y1 - 2024/4/9
N2 - Silicon carbide (SiC) is a wide-band gap semiconductor that exceeds other semiconducting materials (except diamond) in electrical, mechanical, chemical, and radiation stability. In this paper, we report a novel approach to fabrication of SiC nano films on a Si substrate, which is based on the endotaxial growth of a SiC crystalline phase in a graphite-like carbon (GLC) matrix. GLC films were formed by carbonization of rigid rod polyimide (PI) Langmuir–Blodgett (LB) films on a Si substrate at 1000 °C in vacuum. After rapid thermal annealing of GLC films at 1100 °C and 1200 °C, new types of heterostructures SiC(10 nm)/GLC(20 nm)/Si(111) and SiC(20 nm)/GLC(15 nm)/SiC(10 nm)/Si(111) were obtained. The SiC top layer was formed due to the Si-containing gas phase present above the surface of GLC film. An advantage of the proposed method of endotaxy is that the SiC crystalline phase is formed within the volume of the GLC film of a thickness predetermined by using PI LB films with different numbers of monolayers for carbonization. This approach allows growing SiC layers close to the 2D state, which is promising for optoelectronics, photovoltaics, spintronics.
AB - Silicon carbide (SiC) is a wide-band gap semiconductor that exceeds other semiconducting materials (except diamond) in electrical, mechanical, chemical, and radiation stability. In this paper, we report a novel approach to fabrication of SiC nano films on a Si substrate, which is based on the endotaxial growth of a SiC crystalline phase in a graphite-like carbon (GLC) matrix. GLC films were formed by carbonization of rigid rod polyimide (PI) Langmuir–Blodgett (LB) films on a Si substrate at 1000 °C in vacuum. After rapid thermal annealing of GLC films at 1100 °C and 1200 °C, new types of heterostructures SiC(10 nm)/GLC(20 nm)/Si(111) and SiC(20 nm)/GLC(15 nm)/SiC(10 nm)/Si(111) were obtained. The SiC top layer was formed due to the Si-containing gas phase present above the surface of GLC film. An advantage of the proposed method of endotaxy is that the SiC crystalline phase is formed within the volume of the GLC film of a thickness predetermined by using PI LB films with different numbers of monolayers for carbonization. This approach allows growing SiC layers close to the 2D state, which is promising for optoelectronics, photovoltaics, spintronics.
KW - Langmuir-Blodgett
KW - SiC films
KW - carbonization
KW - graphite-like carbon
KW - polyimide
UR - https://www.mendeley.com/catalogue/9c5da6d5-33eb-3999-9500-14a3277bf8b1/
U2 - 10.1088/1361-6528/ad373f
DO - 10.1088/1361-6528/ad373f
M3 - Article
VL - 35
JO - Nanotechnology
JF - Nanotechnology
SN - 0957-4484
IS - 26
M1 - 265603
ER -
ID: 118463817