• Svetlana Goloudina
  • Vyacheslav Pasyuta
  • Demid Kirilenko
  • Aleksandr Smirnov
  • Igor Kasatkin
  • Evgeny Zhizhin
  • Aleksandra Koroleva
  • Evgeny Sevostiyanov
  • Mikhail Panov
  • Valentina Trushlyakova
  • Iosif Gofman
  • Valentin Svetlichnyi
  • Viktor Luchinin
Silicon carbide (SiC) is a wide-band gap semiconductor that exceeds other semiconducting materials (except diamond) in electrical, mechanical, chemical, and radiation stability. In this paper, we report a novel approach to fabrication of SiC nano films on a Si substrate, which is based on the endotaxial growth of a SiC crystalline phase in a graphite-like carbon (GLC) matrix. GLC films were formed by carbonization of rigid rod polyimide (PI) Langmuir–Blodgett (LB) films on a Si substrate at 1000 °C in vacuum. After rapid thermal annealing of GLC films at 1100 °C and 1200 °C, new types of heterostructures SiC(10 nm)/GLC(20 nm)/Si(111) and SiC(20 nm)/GLC(15 nm)/SiC(10 nm)/Si(111) were obtained. The SiC top layer was formed due to the Si-containing gas phase present above the surface of GLC film. An advantage of the proposed method of endotaxy is that the SiC crystalline phase is formed within the volume of the GLC film of a thickness predetermined by using PI LB films with different numbers of monolayers for carbonization. This approach allows growing SiC layers close to the 2D state, which is promising for optoelectronics, photovoltaics, spintronics.
Язык оригиналаанглийский
Номер статьи265603
Число страниц1
Номер выпуска26
СостояниеОпубликовано - 9 апр 2024

ID: 118463817