Synthesis by Molecular Beam Epitaxy and Properties of InGaN Nanostructures of Branched Morphology on a Silicon Substrate

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Synthesis by Molecular Beam Epitaxy and Properties of InGaN Nanostructures of Branched Morphology on a Silicon Substrate. / Reznik, R. R.; Kotlyar, K. P.; Kryzhanovskaya, N. V.; Morozov, S. V.; Cirlin, G. E.

в: Technical Physics Letters, Том 45, № 11, 01.11.2019, стр. 1111-1113.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

BibTeX

@article{9d0caf112c6941ab95f4d69b7b542135,

title = "Synthesis by Molecular Beam Epitaxy and Properties of InGaN Nanostructures of Branched Morphology on a Silicon Substrate",

abstract = "Abstract—: The principal possibility of synthesis of InGaN nanostructures of branched morphology (“nanoflowers”) by molecular beam epitaxy on the surface of a silicon substrate has been demonstrated. The results of morphological studies have shown that the development of the morphology of InGaN nanostructures occurs in several stages even when maintaining a constant substrate temperature. The grown structures exhibit a photoluminescence line in a wide wavelength range from 450 to 950 nm at room temperature.",

keywords = "molecular beam epitaxy, nitride nanostructures, optoelectronics, semiconductors, silicon",

author = "Reznik, {R. R.} and Kotlyar, {K. P.} and Kryzhanovskaya, {N. V.} and Morozov, {S. V.} and Cirlin, {G. E.}",

note = "Publisher Copyright: {\textcopyright} 2019, Pleiades Publishing, Ltd.",

year = "2019",

month = nov,

day = "1",

doi = "10.1134/S1063785019110129",

language = "English",

volume = "45",

pages = "1111--1113",

journal = "Technical Physics Letters",

issn = "1063-7850",

publisher = "МАИК {"}Наука/Интерпериодика{"}",

number = "11",

}

RIS

TY - JOUR

T1 - Synthesis by Molecular Beam Epitaxy and Properties of InGaN Nanostructures of Branched Morphology on a Silicon Substrate

AU - Reznik, R. R.

AU - Kotlyar, K. P.

AU - Kryzhanovskaya, N. V.

AU - Morozov, S. V.

AU - Cirlin, G. E.

PY - 2019/11/1

Y1 - 2019/11/1

N2 - Abstract—: The principal possibility of synthesis of InGaN nanostructures of branched morphology (“nanoflowers”) by molecular beam epitaxy on the surface of a silicon substrate has been demonstrated. The results of morphological studies have shown that the development of the morphology of InGaN nanostructures occurs in several stages even when maintaining a constant substrate temperature. The grown structures exhibit a photoluminescence line in a wide wavelength range from 450 to 950 nm at room temperature.

AB - Abstract—: The principal possibility of synthesis of InGaN nanostructures of branched morphology (“nanoflowers”) by molecular beam epitaxy on the surface of a silicon substrate has been demonstrated. The results of morphological studies have shown that the development of the morphology of InGaN nanostructures occurs in several stages even when maintaining a constant substrate temperature. The grown structures exhibit a photoluminescence line in a wide wavelength range from 450 to 950 nm at room temperature.

KW - molecular beam epitaxy

KW - nitride nanostructures

KW - optoelectronics

KW - semiconductors

KW - silicon

UR - http://www.scopus.com/inward/record.url?scp=85076498544&partnerID=8YFLogxK

U2 - 10.1134/S1063785019110129

DO - 10.1134/S1063785019110129

M3 - Article

AN - SCOPUS:85076498544

VL - 45

SP - 1111

EP - 1113

JO - Technical Physics Letters

JF - Technical Physics Letters

SN - 1063-7850

IS - 11

ER -

ID: 98506365