Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
Abstract—: The principal possibility of synthesis of InGaN nanostructures of branched morphology (“nanoflowers”) by molecular beam epitaxy on the surface of a silicon substrate has been demonstrated. The results of morphological studies have shown that the development of the morphology of InGaN nanostructures occurs in several stages even when maintaining a constant substrate temperature. The grown structures exhibit a photoluminescence line in a wide wavelength range from 450 to 950 nm at room temperature.
Язык оригинала | английский |
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Страницы (с-по) | 1111-1113 |
Число страниц | 3 |
Журнал | Technical Physics Letters |
Том | 45 |
Номер выпуска | 11 |
DOI | |
Состояние | Опубликовано - 1 ноя 2019 |
ID: 98506365