Research output: Contribution to journal › Article › peer-review
Synthesis by Molecular Beam Epitaxy and Properties of InGaN Nanostructures of Branched Morphology on a Silicon Substrate. / Reznik, R. R.; Kotlyar, K. P.; Kryzhanovskaya, N. V.; Morozov, S. V.; Cirlin, G. E.
In: Technical Physics Letters, Vol. 45, No. 11, 01.11.2019, p. 1111-1113.Research output: Contribution to journal › Article › peer-review
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TY - JOUR
T1 - Synthesis by Molecular Beam Epitaxy and Properties of InGaN Nanostructures of Branched Morphology on a Silicon Substrate
AU - Reznik, R. R.
AU - Kotlyar, K. P.
AU - Kryzhanovskaya, N. V.
AU - Morozov, S. V.
AU - Cirlin, G. E.
N1 - Publisher Copyright: © 2019, Pleiades Publishing, Ltd.
PY - 2019/11/1
Y1 - 2019/11/1
N2 - Abstract—: The principal possibility of synthesis of InGaN nanostructures of branched morphology (“nanoflowers”) by molecular beam epitaxy on the surface of a silicon substrate has been demonstrated. The results of morphological studies have shown that the development of the morphology of InGaN nanostructures occurs in several stages even when maintaining a constant substrate temperature. The grown structures exhibit a photoluminescence line in a wide wavelength range from 450 to 950 nm at room temperature.
AB - Abstract—: The principal possibility of synthesis of InGaN nanostructures of branched morphology (“nanoflowers”) by molecular beam epitaxy on the surface of a silicon substrate has been demonstrated. The results of morphological studies have shown that the development of the morphology of InGaN nanostructures occurs in several stages even when maintaining a constant substrate temperature. The grown structures exhibit a photoluminescence line in a wide wavelength range from 450 to 950 nm at room temperature.
KW - molecular beam epitaxy
KW - nitride nanostructures
KW - optoelectronics
KW - semiconductors
KW - silicon
UR - http://www.scopus.com/inward/record.url?scp=85076498544&partnerID=8YFLogxK
U2 - 10.1134/S1063785019110129
DO - 10.1134/S1063785019110129
M3 - Article
AN - SCOPUS:85076498544
VL - 45
SP - 1111
EP - 1113
JO - Technical Physics Letters
JF - Technical Physics Letters
SN - 1063-7850
IS - 11
ER -
ID: 98506365