Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
Surface passivation of GaAs nanowires by the atomic layer deposition of AlN. / Shtrom, I. V.; Bouravleuv, A. D.; Samsonenko, Yu B.; Khrebtov, A. I.; Soshnikov, I. P.; Reznik, R. R.; Cirlin, G. E.; Dhaka, V.; Perros, A.; Lipsanen, H.
в: Semiconductors, Том 50, № 12, 01.12.2016, стр. 1619-1621.Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
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TY - JOUR
T1 - Surface passivation of GaAs nanowires by the atomic layer deposition of AlN
AU - Shtrom, I. V.
AU - Bouravleuv, A. D.
AU - Samsonenko, Yu B.
AU - Khrebtov, A. I.
AU - Soshnikov, I. P.
AU - Reznik, R. R.
AU - Cirlin, G. E.
AU - Dhaka, V.
AU - Perros, A.
AU - Lipsanen, H.
N1 - Publisher Copyright: © 2016, Pleiades Publishing, Ltd.
PY - 2016/12/1
Y1 - 2016/12/1
N2 - It is shown that the atomic layer deposition of thin AlN layers can be used to passivate the surface states of GaAs nanowires synthesized by molecular-beam epitaxy. Studies of the optical properties of samples by low-temperature photoluminescence measurements shows that the photoluminescence-signal intensity can be increased by a factor of up to five by passivating the nanowires with a 25-Å-thick AlN layer.
AB - It is shown that the atomic layer deposition of thin AlN layers can be used to passivate the surface states of GaAs nanowires synthesized by molecular-beam epitaxy. Studies of the optical properties of samples by low-temperature photoluminescence measurements shows that the photoluminescence-signal intensity can be increased by a factor of up to five by passivating the nanowires with a 25-Å-thick AlN layer.
UR - http://www.scopus.com/inward/record.url?scp=85010066570&partnerID=8YFLogxK
U2 - 10.1134/S1063782616120186
DO - 10.1134/S1063782616120186
M3 - Article
AN - SCOPUS:85010066570
VL - 50
SP - 1619
EP - 1621
JO - Semiconductors
JF - Semiconductors
SN - 1063-7826
IS - 12
ER -
ID: 99723061