Standard
Surface passivation of GaAs nanowires by the atomic layer deposition of AlN. / Shtrom, I. V.; Bouravleuv, A. D.; Samsonenko, Yu B.; Khrebtov, A. I.; Soshnikov, I. P.; Reznik, R. R.; Cirlin, G. E.; Dhaka, V.; Perros, A.; Lipsanen, H.
In:
Semiconductors, Vol. 50, No. 12, 01.12.2016, p. 1619-1621.
Research output: Contribution to journal › Article › peer-review
Harvard
Shtrom, IV, Bouravleuv, AD, Samsonenko, YB
, Khrebtov, AI, Soshnikov, IP
, Reznik, RR, Cirlin, GE, Dhaka, V, Perros, A & Lipsanen, H 2016, '
Surface passivation of GaAs nanowires by the atomic layer deposition of AlN',
Semiconductors, vol. 50, no. 12, pp. 1619-1621.
https://doi.org/10.1134/S1063782616120186
APA
Shtrom, I. V., Bouravleuv, A. D., Samsonenko, Y. B.
, Khrebtov, A. I., Soshnikov, I. P.
, Reznik, R. R., Cirlin, G. E., Dhaka, V., Perros, A., & Lipsanen, H. (2016).
Surface passivation of GaAs nanowires by the atomic layer deposition of AlN.
Semiconductors,
50(12), 1619-1621.
https://doi.org/10.1134/S1063782616120186
Vancouver
Author
Shtrom, I. V. ; Bouravleuv, A. D. ; Samsonenko, Yu B.
; Khrebtov, A. I. ; Soshnikov, I. P.
; Reznik, R. R. ; Cirlin, G. E. ; Dhaka, V. ; Perros, A. ; Lipsanen, H. /
Surface passivation of GaAs nanowires by the atomic layer deposition of AlN. In:
Semiconductors. 2016 ; Vol. 50, No. 12. pp. 1619-1621.
BibTeX
@article{3a4070ef60c44622b7de75f5054d409c,
title = "Surface passivation of GaAs nanowires by the atomic layer deposition of AlN",
abstract = "It is shown that the atomic layer deposition of thin AlN layers can be used to passivate the surface states of GaAs nanowires synthesized by molecular-beam epitaxy. Studies of the optical properties of samples by low-temperature photoluminescence measurements shows that the photoluminescence-signal intensity can be increased by a factor of up to five by passivating the nanowires with a 25-{\AA}-thick AlN layer.",
author = "Shtrom, {I. V.} and Bouravleuv, {A. D.} and Samsonenko, {Yu B.} and Khrebtov, {A. I.} and Soshnikov, {I. P.} and Reznik, {R. R.} and Cirlin, {G. E.} and V. Dhaka and A. Perros and H. Lipsanen",
note = "Publisher Copyright: {\textcopyright} 2016, Pleiades Publishing, Ltd.",
year = "2016",
month = dec,
day = "1",
doi = "10.1134/S1063782616120186",
language = "English",
volume = "50",
pages = "1619--1621",
journal = "Semiconductors",
issn = "1063-7826",
publisher = "МАИК {"}Наука/Интерпериодика{"}",
number = "12",
}
RIS
TY - JOUR
T1 - Surface passivation of GaAs nanowires by the atomic layer deposition of AlN
AU - Shtrom, I. V.
AU - Bouravleuv, A. D.
AU - Samsonenko, Yu B.
AU - Khrebtov, A. I.
AU - Soshnikov, I. P.
AU - Reznik, R. R.
AU - Cirlin, G. E.
AU - Dhaka, V.
AU - Perros, A.
AU - Lipsanen, H.
N1 - Publisher Copyright:
© 2016, Pleiades Publishing, Ltd.
PY - 2016/12/1
Y1 - 2016/12/1
N2 - It is shown that the atomic layer deposition of thin AlN layers can be used to passivate the surface states of GaAs nanowires synthesized by molecular-beam epitaxy. Studies of the optical properties of samples by low-temperature photoluminescence measurements shows that the photoluminescence-signal intensity can be increased by a factor of up to five by passivating the nanowires with a 25-Å-thick AlN layer.
AB - It is shown that the atomic layer deposition of thin AlN layers can be used to passivate the surface states of GaAs nanowires synthesized by molecular-beam epitaxy. Studies of the optical properties of samples by low-temperature photoluminescence measurements shows that the photoluminescence-signal intensity can be increased by a factor of up to five by passivating the nanowires with a 25-Å-thick AlN layer.
UR - http://www.scopus.com/inward/record.url?scp=85010066570&partnerID=8YFLogxK
U2 - 10.1134/S1063782616120186
DO - 10.1134/S1063782616120186
M3 - Article
AN - SCOPUS:85010066570
VL - 50
SP - 1619
EP - 1621
JO - Semiconductors
JF - Semiconductors
SN - 1063-7826
IS - 12
ER -
