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Structural and Optical Properties of Wurtzite Algaas Nanowires Grown by MBE on Si(111) Substrate. / Shtrom, I. V.; Kotlyar, K. P.; Filosofov, N. G.; Serov, A. Yu.; Krizhkov, D. I.; Samsonenko, Yu. B.; Ilkiev, I. V.; Reznik, R. R.; Agekyan, V. F.; Cirlin, G. E.

в: Semiconductors, Том 52, № 16, 17.12.2018, стр. 2146-2148.

Результаты исследований: Научные публикации в периодических изданияхстатьяРецензирование

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Author

Shtrom, I. V. ; Kotlyar, K. P. ; Filosofov, N. G. ; Serov, A. Yu. ; Krizhkov, D. I. ; Samsonenko, Yu. B. ; Ilkiev, I. V. ; Reznik, R. R. ; Agekyan, V. F. ; Cirlin, G. E. / Structural and Optical Properties of Wurtzite Algaas Nanowires Grown by MBE on Si(111) Substrate. в: Semiconductors. 2018 ; Том 52, № 16. стр. 2146-2148.

BibTeX

@article{761961d3bf0e4e789e7abf96f9606643,
title = "Structural and Optical Properties of Wurtzite Algaas Nanowires Grown by MBE on Si(111) Substrate",
abstract = "We present the results of photoluminescence measurements of AlxGa1-xAs nanowires, together with the transmission electron microscopy structural analysis. AlxGa1-xAs nanowires were grown by molecular beam epitaxy under the nominal aluminum contents ? = 0.3-0.7. The obtained results demonstrate the presence of wurtzite structure in AlxGa1-xAs nanowires.",
keywords = "PHOTOLUMINESCENCE",
author = "Shtrom, {I. V.} and Kotlyar, {K. P.} and Filosofov, {N. G.} and Serov, {A. Yu.} and Krizhkov, {D. I.} and Samsonenko, {Yu. B.} and Ilkiev, {I. V.} and Reznik, {R. R.} and Agekyan, {V. F.} and Cirlin, {G. E.}",
year = "2018",
month = dec,
day = "17",
doi = "10.1134/S1063782618160285",
language = "English",
volume = "52",
pages = "2146--2148",
journal = "Semiconductors",
issn = "1063-7826",
publisher = "МАИК {"}Наука/Интерпериодика{"}",
number = "16",

}

RIS

TY - JOUR

T1 - Structural and Optical Properties of Wurtzite Algaas Nanowires Grown by MBE on Si(111) Substrate

AU - Shtrom, I. V.

AU - Kotlyar, K. P.

AU - Filosofov, N. G.

AU - Serov, A. Yu.

AU - Krizhkov, D. I.

AU - Samsonenko, Yu. B.

AU - Ilkiev, I. V.

AU - Reznik, R. R.

AU - Agekyan, V. F.

AU - Cirlin, G. E.

PY - 2018/12/17

Y1 - 2018/12/17

N2 - We present the results of photoluminescence measurements of AlxGa1-xAs nanowires, together with the transmission electron microscopy structural analysis. AlxGa1-xAs nanowires were grown by molecular beam epitaxy under the nominal aluminum contents ? = 0.3-0.7. The obtained results demonstrate the presence of wurtzite structure in AlxGa1-xAs nanowires.

AB - We present the results of photoluminescence measurements of AlxGa1-xAs nanowires, together with the transmission electron microscopy structural analysis. AlxGa1-xAs nanowires were grown by molecular beam epitaxy under the nominal aluminum contents ? = 0.3-0.7. The obtained results demonstrate the presence of wurtzite structure in AlxGa1-xAs nanowires.

KW - PHOTOLUMINESCENCE

U2 - 10.1134/S1063782618160285

DO - 10.1134/S1063782618160285

M3 - Article

VL - 52

SP - 2146

EP - 2148

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 16

ER -

ID: 36518619