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Structural and Optical Properties of Wurtzite Algaas Nanowires Grown by MBE on Si(111) Substrate. / Shtrom, I. V.; Kotlyar, K. P.; Filosofov, N. G.; Serov, A. Yu.; Krizhkov, D. I.; Samsonenko, Yu. B.; Ilkiev, I. V.; Reznik, R. R.; Agekyan, V. F.; Cirlin, G. E.
в:
Semiconductors, Том 52, № 16, 17.12.2018, стр. 2146-2148.
Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
Harvard
Shtrom, IV, Kotlyar, KP, Filosofov, NG, Serov, AY, Krizhkov, DI, Samsonenko, YB, Ilkiev, IV
, Reznik, RR, Agekyan, VF & Cirlin, GE 2018, '
Structural and Optical Properties of Wurtzite Algaas Nanowires Grown by MBE on Si(111) Substrate',
Semiconductors, Том. 52, № 16, стр. 2146-2148.
https://doi.org/10.1134/S1063782618160285,
https://doi.org/10.1134/S1063782618160285
APA
Shtrom, I. V., Kotlyar, K. P., Filosofov, N. G., Serov, A. Y., Krizhkov, D. I., Samsonenko, Y. B., Ilkiev, I. V.
, Reznik, R. R., Agekyan, V. F., & Cirlin, G. E. (2018).
Structural and Optical Properties of Wurtzite Algaas Nanowires Grown by MBE on Si(111) Substrate.
Semiconductors,
52(16), 2146-2148.
https://doi.org/10.1134/S1063782618160285,
https://doi.org/10.1134/S1063782618160285
Vancouver
Author
Shtrom, I. V. ; Kotlyar, K. P. ; Filosofov, N. G. ; Serov, A. Yu. ; Krizhkov, D. I. ; Samsonenko, Yu. B. ; Ilkiev, I. V.
; Reznik, R. R. ; Agekyan, V. F. ; Cirlin, G. E. /
Structural and Optical Properties of Wurtzite Algaas Nanowires Grown by MBE on Si(111) Substrate. в:
Semiconductors. 2018 ; Том 52, № 16. стр. 2146-2148.
BibTeX
@article{761961d3bf0e4e789e7abf96f9606643,
title = "Structural and Optical Properties of Wurtzite Algaas Nanowires Grown by MBE on Si(111) Substrate",
abstract = "We present the results of photoluminescence measurements of AlxGa1-xAs nanowires, together with the transmission electron microscopy structural analysis. AlxGa1-xAs nanowires were grown by molecular beam epitaxy under the nominal aluminum contents ? = 0.3-0.7. The obtained results demonstrate the presence of wurtzite structure in AlxGa1-xAs nanowires.",
keywords = "PHOTOLUMINESCENCE",
author = "Shtrom, {I. V.} and Kotlyar, {K. P.} and Filosofov, {N. G.} and Serov, {A. Yu.} and Krizhkov, {D. I.} and Samsonenko, {Yu. B.} and Ilkiev, {I. V.} and Reznik, {R. R.} and Agekyan, {V. F.} and Cirlin, {G. E.}",
year = "2018",
month = dec,
day = "17",
doi = "10.1134/S1063782618160285",
language = "English",
volume = "52",
pages = "2146--2148",
journal = "Semiconductors",
issn = "1063-7826",
publisher = "МАИК {"}Наука/Интерпериодика{"}",
number = "16",
}
RIS
TY - JOUR
T1 - Structural and Optical Properties of Wurtzite Algaas Nanowires Grown by MBE on Si(111) Substrate
AU - Shtrom, I. V.
AU - Kotlyar, K. P.
AU - Filosofov, N. G.
AU - Serov, A. Yu.
AU - Krizhkov, D. I.
AU - Samsonenko, Yu. B.
AU - Ilkiev, I. V.
AU - Reznik, R. R.
AU - Agekyan, V. F.
AU - Cirlin, G. E.
PY - 2018/12/17
Y1 - 2018/12/17
N2 - We present the results of photoluminescence measurements of AlxGa1-xAs nanowires, together with the transmission electron microscopy structural analysis. AlxGa1-xAs nanowires were grown by molecular beam epitaxy under the nominal aluminum contents ? = 0.3-0.7. The obtained results demonstrate the presence of wurtzite structure in AlxGa1-xAs nanowires.
AB - We present the results of photoluminescence measurements of AlxGa1-xAs nanowires, together with the transmission electron microscopy structural analysis. AlxGa1-xAs nanowires were grown by molecular beam epitaxy under the nominal aluminum contents ? = 0.3-0.7. The obtained results demonstrate the presence of wurtzite structure in AlxGa1-xAs nanowires.
KW - PHOTOLUMINESCENCE
U2 - 10.1134/S1063782618160285
DO - 10.1134/S1063782618160285
M3 - Article
VL - 52
SP - 2146
EP - 2148
JO - Semiconductors
JF - Semiconductors
SN - 1063-7826
IS - 16
ER -
