Standard

Specific Features of Structural Stresses in InGaN/GaN Nanowires. / Soshnikov, I. P.; Kotlyar, K. P.; Reznik, R. R.; Gridchin, V. O.; Lendyashova, V. V.; Vershinin, A. V.; Lysak, V. V.; Kirilenko, D. A.; Bert, N. A.; Cirlin, G. E.

в: Semiconductors, Том 55, № 10, 10.2021, стр. 795-798.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Soshnikov, IP, Kotlyar, KP, Reznik, RR, Gridchin, VO, Lendyashova, VV, Vershinin, AV, Lysak, VV, Kirilenko, DA, Bert, NA & Cirlin, GE 2021, 'Specific Features of Structural Stresses in InGaN/GaN Nanowires', Semiconductors, Том. 55, № 10, стр. 795-798. https://doi.org/10.1134/S1063782621090207

APA

Soshnikov, I. P., Kotlyar, K. P., Reznik, R. R., Gridchin, V. O., Lendyashova, V. V., Vershinin, A. V., Lysak, V. V., Kirilenko, D. A., Bert, N. A., & Cirlin, G. E. (2021). Specific Features of Structural Stresses in InGaN/GaN Nanowires. Semiconductors, 55(10), 795-798. https://doi.org/10.1134/S1063782621090207

Vancouver

Soshnikov IP, Kotlyar KP, Reznik RR, Gridchin VO, Lendyashova VV, Vershinin AV и пр. Specific Features of Structural Stresses in InGaN/GaN Nanowires. Semiconductors. 2021 Окт.;55(10):795-798. https://doi.org/10.1134/S1063782621090207

Author

Soshnikov, I. P. ; Kotlyar, K. P. ; Reznik, R. R. ; Gridchin, V. O. ; Lendyashova, V. V. ; Vershinin, A. V. ; Lysak, V. V. ; Kirilenko, D. A. ; Bert, N. A. ; Cirlin, G. E. / Specific Features of Structural Stresses in InGaN/GaN Nanowires. в: Semiconductors. 2021 ; Том 55, № 10. стр. 795-798.

BibTeX

@article{7e9fe6957d994e4e9c87550040c1e7ec,
title = "Specific Features of Structural Stresses in InGaN/GaN Nanowires",
abstract = "Abstract: An experimental study aimed at developing the method of the spontaneous synthesis of InGaN/GaN nanowires formed as radial heterostructures by molecular-beam epitaxy is reported. By means of electron microscopy, it is shown that a wedge-shaped crack can be formed at an In content x = 0.4 and 0.04 in the core and shell, respectively. On the basis of the model of internal structural stresses, a formula is proposed to estimate the critical dimensions and composition for the formation of cracks in nanowires. Comparison of the estimates with the experimental morphology data shows good agreement between them.",
keywords = "axial heterostructures, gallium nitride, indium nitride, molecular-beam epitaxy, nanowires, stressed heterostructures",
author = "Soshnikov, {I. P.} and Kotlyar, {K. P.} and Reznik, {R. R.} and Gridchin, {V. O.} and Lendyashova, {V. V.} and Vershinin, {A. V.} and Lysak, {V. V.} and Kirilenko, {D. A.} and Bert, {N. A.} and Cirlin, {G. E.}",
note = "Publisher Copyright: {\textcopyright} 2021, Pleiades Publishing, Ltd.",
year = "2021",
month = oct,
doi = "10.1134/S1063782621090207",
language = "English",
volume = "55",
pages = "795--798",
journal = "Semiconductors",
issn = "1063-7826",
publisher = "МАИК {"}Наука/Интерпериодика{"}",
number = "10",

}

RIS

TY - JOUR

T1 - Specific Features of Structural Stresses in InGaN/GaN Nanowires

AU - Soshnikov, I. P.

AU - Kotlyar, K. P.

AU - Reznik, R. R.

AU - Gridchin, V. O.

AU - Lendyashova, V. V.

AU - Vershinin, A. V.

AU - Lysak, V. V.

AU - Kirilenko, D. A.

AU - Bert, N. A.

AU - Cirlin, G. E.

N1 - Publisher Copyright: © 2021, Pleiades Publishing, Ltd.

PY - 2021/10

Y1 - 2021/10

N2 - Abstract: An experimental study aimed at developing the method of the spontaneous synthesis of InGaN/GaN nanowires formed as radial heterostructures by molecular-beam epitaxy is reported. By means of electron microscopy, it is shown that a wedge-shaped crack can be formed at an In content x = 0.4 and 0.04 in the core and shell, respectively. On the basis of the model of internal structural stresses, a formula is proposed to estimate the critical dimensions and composition for the formation of cracks in nanowires. Comparison of the estimates with the experimental morphology data shows good agreement between them.

AB - Abstract: An experimental study aimed at developing the method of the spontaneous synthesis of InGaN/GaN nanowires formed as radial heterostructures by molecular-beam epitaxy is reported. By means of electron microscopy, it is shown that a wedge-shaped crack can be formed at an In content x = 0.4 and 0.04 in the core and shell, respectively. On the basis of the model of internal structural stresses, a formula is proposed to estimate the critical dimensions and composition for the formation of cracks in nanowires. Comparison of the estimates with the experimental morphology data shows good agreement between them.

KW - axial heterostructures

KW - gallium nitride

KW - indium nitride

KW - molecular-beam epitaxy

KW - nanowires

KW - stressed heterostructures

UR - http://www.scopus.com/inward/record.url?scp=85124734239&partnerID=8YFLogxK

U2 - 10.1134/S1063782621090207

DO - 10.1134/S1063782621090207

M3 - Article

AN - SCOPUS:85124734239

VL - 55

SP - 795

EP - 798

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 10

ER -

ID: 96850872