Self-Organization of the Composition of AlxGa1 –xN Films Grown on Hybrid SiC/Si Substrates

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Self-Organization of the Composition of Al_xGa_1 –_xN Films Grown on Hybrid SiC/Si Substrates. / Kukushkin, S. A.; Sharofidinov, Sh Sh; Osipov, A. V.; Grashchenko, A. S.; Kandakov, A. V.; Osipova, E. V.; Kotlyar, K. P.; Ubyivovk, E. V.

в: Physics of the Solid State, Том 63, № 3, 01.03.2021, стр. 442-448.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

BibTeX

@article{49a2bfd3df3c445d8236a799f3863fe6,

title = "Self-Organization of the Composition of AlxGa1 –xN Films Grown on Hybrid SiC/Si Substrates",

abstract = "Abstract: The phenomenon of self-organized change in the composition of epitaxial layers of the AlxGa1 ‒ xN solid solution during their growth by chloride-hydride epitaxy on SiC/Si(111) hybrid substrates is discovered using spectral ellipsometry, Raman spectroscopy, and scanning microscopy with an X-ray spectrometer. It is found that interlayers or domains consisting of AlGaN of stoichiometric composition appear during the growth of AlxGa1 – xN layers with a low (about 11–24%) content of Al. A qualitative model is proposed, according to which self-organization in composition occurs due to the effect of two processes on the growth kinetics of the AlxGa1 – xN film. The first process is associated with the competition of two chemical reactions proceeding at different rates. One of these reactions is the formation of AlN; the second reaction is the formation of GaN. The second process, closely related to the first one, is the appearance of elastic compressive and tensile stresses during the growth of AlxGa1 – xN films on SiC/Si(111). Both processes influence each other, which leads to a complex pattern of aperiodic variation of the composition over the thickness of the film layer.",

keywords = "AB compounds, AlGaN, AlN, GaN, heterostructures, HVPE method, self-organization, silicon carbide on silicon, solid solutions, wide-gap semiconductors, A(3)B(5) compounds",

author = "Kukushkin, {S. A.} and Sharofidinov, {Sh Sh} and Osipov, {A. V.} and Grashchenko, {A. S.} and Kandakov, {A. V.} and Osipova, {E. V.} and Kotlyar, {K. P.} and Ubyivovk, {E. V.}",

year = "2021",

month = mar,

day = "1",

doi = "10.1134/s1063783421030100",

language = "English",

volume = "63",

pages = "442--448",

journal = "Physics of the Solid State",

issn = "1063-7834",

publisher = "МАИК {"}Наука/Интерпериодика{"}",

number = "3",

}

RIS

TY - JOUR

T1 - Self-Organization of the Composition of AlxGa1 –xN Films Grown on Hybrid SiC/Si Substrates

AU - Kukushkin, S. A.

AU - Sharofidinov, Sh Sh

AU - Osipov, A. V.

AU - Grashchenko, A. S.

AU - Kandakov, A. V.

AU - Osipova, E. V.

AU - Kotlyar, K. P.

AU - Ubyivovk, E. V.

PY - 2021/3/1

Y1 - 2021/3/1

N2 - Abstract: The phenomenon of self-organized change in the composition of epitaxial layers of the AlxGa1 ‒ xN solid solution during their growth by chloride-hydride epitaxy on SiC/Si(111) hybrid substrates is discovered using spectral ellipsometry, Raman spectroscopy, and scanning microscopy with an X-ray spectrometer. It is found that interlayers or domains consisting of AlGaN of stoichiometric composition appear during the growth of AlxGa1 – xN layers with a low (about 11–24%) content of Al. A qualitative model is proposed, according to which self-organization in composition occurs due to the effect of two processes on the growth kinetics of the AlxGa1 – xN film. The first process is associated with the competition of two chemical reactions proceeding at different rates. One of these reactions is the formation of AlN; the second reaction is the formation of GaN. The second process, closely related to the first one, is the appearance of elastic compressive and tensile stresses during the growth of AlxGa1 – xN films on SiC/Si(111). Both processes influence each other, which leads to a complex pattern of aperiodic variation of the composition over the thickness of the film layer.

AB - Abstract: The phenomenon of self-organized change in the composition of epitaxial layers of the AlxGa1 ‒ xN solid solution during their growth by chloride-hydride epitaxy on SiC/Si(111) hybrid substrates is discovered using spectral ellipsometry, Raman spectroscopy, and scanning microscopy with an X-ray spectrometer. It is found that interlayers or domains consisting of AlGaN of stoichiometric composition appear during the growth of AlxGa1 – xN layers with a low (about 11–24%) content of Al. A qualitative model is proposed, according to which self-organization in composition occurs due to the effect of two processes on the growth kinetics of the AlxGa1 – xN film. The first process is associated with the competition of two chemical reactions proceeding at different rates. One of these reactions is the formation of AlN; the second reaction is the formation of GaN. The second process, closely related to the first one, is the appearance of elastic compressive and tensile stresses during the growth of AlxGa1 – xN films on SiC/Si(111). Both processes influence each other, which leads to a complex pattern of aperiodic variation of the composition over the thickness of the film layer.

KW - AB compounds

KW - AlGaN

KW - AlN

KW - GaN

KW - heterostructures

KW - HVPE method

KW - self-organization

KW - silicon carbide on silicon

KW - solid solutions

KW - wide-gap semiconductors

KW - A(3)B(5) compounds

UR - http://www.scopus.com/inward/record.url?scp=85103890018&partnerID=8YFLogxK

UR - https://www.mendeley.com/catalogue/419e47f5-9baf-3de6-b0a6-bb5f4ab023b5/

U2 - 10.1134/s1063783421030100

DO - 10.1134/s1063783421030100

M3 - Article

AN - SCOPUS:85103890018

VL - 63

SP - 442

EP - 448

JO - Physics of the Solid State

JF - Physics of the Solid State

SN - 1063-7834

IS - 3

ER -

ID: 76936900