Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
Self-Organization of the Composition of AlxGa1 –xN Films Grown on Hybrid SiC/Si Substrates. / Kukushkin, S. A.; Sharofidinov, Sh Sh; Osipov, A. V.; Grashchenko, A. S.; Kandakov, A. V.; Osipova, E. V.; Kotlyar, K. P.; Ubyivovk, E. V.
в: Physics of the Solid State, Том 63, № 3, 01.03.2021, стр. 442-448.Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
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TY - JOUR
T1 - Self-Organization of the Composition of AlxGa1 –xN Films Grown on Hybrid SiC/Si Substrates
AU - Kukushkin, S. A.
AU - Sharofidinov, Sh Sh
AU - Osipov, A. V.
AU - Grashchenko, A. S.
AU - Kandakov, A. V.
AU - Osipova, E. V.
AU - Kotlyar, K. P.
AU - Ubyivovk, E. V.
N1 - Publisher Copyright: © 2021, Pleiades Publishing, Ltd. Copyright: Copyright 2021 Elsevier B.V., All rights reserved.
PY - 2021/3/1
Y1 - 2021/3/1
N2 - Abstract: The phenomenon of self-organized change in the composition of epitaxial layers of the AlxGa1 ‒ xN solid solution during their growth by chloride-hydride epitaxy on SiC/Si(111) hybrid substrates is discovered using spectral ellipsometry, Raman spectroscopy, and scanning microscopy with an X-ray spectrometer. It is found that interlayers or domains consisting of AlGaN of stoichiometric composition appear during the growth of AlxGa1 – xN layers with a low (about 11–24%) content of Al. A qualitative model is proposed, according to which self-organization in composition occurs due to the effect of two processes on the growth kinetics of the AlxGa1 – xN film. The first process is associated with the competition of two chemical reactions proceeding at different rates. One of these reactions is the formation of AlN; the second reaction is the formation of GaN. The second process, closely related to the first one, is the appearance of elastic compressive and tensile stresses during the growth of AlxGa1 – xN films on SiC/Si(111). Both processes influence each other, which leads to a complex pattern of aperiodic variation of the composition over the thickness of the film layer.
AB - Abstract: The phenomenon of self-organized change in the composition of epitaxial layers of the AlxGa1 ‒ xN solid solution during their growth by chloride-hydride epitaxy on SiC/Si(111) hybrid substrates is discovered using spectral ellipsometry, Raman spectroscopy, and scanning microscopy with an X-ray spectrometer. It is found that interlayers or domains consisting of AlGaN of stoichiometric composition appear during the growth of AlxGa1 – xN layers with a low (about 11–24%) content of Al. A qualitative model is proposed, according to which self-organization in composition occurs due to the effect of two processes on the growth kinetics of the AlxGa1 – xN film. The first process is associated with the competition of two chemical reactions proceeding at different rates. One of these reactions is the formation of AlN; the second reaction is the formation of GaN. The second process, closely related to the first one, is the appearance of elastic compressive and tensile stresses during the growth of AlxGa1 – xN films on SiC/Si(111). Both processes influence each other, which leads to a complex pattern of aperiodic variation of the composition over the thickness of the film layer.
KW - AB compounds
KW - AlGaN
KW - AlN
KW - GaN
KW - heterostructures
KW - HVPE method
KW - self-organization
KW - silicon carbide on silicon
KW - solid solutions
KW - wide-gap semiconductors
KW - A(3)B(5) compounds
UR - http://www.scopus.com/inward/record.url?scp=85103890018&partnerID=8YFLogxK
UR - https://www.mendeley.com/catalogue/419e47f5-9baf-3de6-b0a6-bb5f4ab023b5/
U2 - 10.1134/s1063783421030100
DO - 10.1134/s1063783421030100
M3 - Article
AN - SCOPUS:85103890018
VL - 63
SP - 442
EP - 448
JO - Physics of the Solid State
JF - Physics of the Solid State
SN - 1063-7834
IS - 3
ER -
ID: 76936900