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Selective-Area Growth of GaN Nanowires on Patterned SiO x/Si Substrates by Molecular Beam Epitaxy. / Gridchin, V. O.; Kotlyar, K. P.; Reznik, R. R.; Dvoretskaya, L. N.; Parfen’eva, A. V.; Mukhin, I. S.; Cirlin, G. E.

в: Technical Physics Letters, Том 46, № 11, 11.2020, стр. 1080-1083.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Gridchin, VO, Kotlyar, KP, Reznik, RR, Dvoretskaya, LN, Parfen’eva, AV, Mukhin, IS & Cirlin, GE 2020, 'Selective-Area Growth of GaN Nanowires on Patterned SiO x/Si Substrates by Molecular Beam Epitaxy', Technical Physics Letters, Том. 46, № 11, стр. 1080-1083. https://doi.org/10.1134/S1063785020110061

APA

Gridchin, V. O., Kotlyar, K. P., Reznik, R. R., Dvoretskaya, L. N., Parfen’eva, A. V., Mukhin, I. S., & Cirlin, G. E. (2020). Selective-Area Growth of GaN Nanowires on Patterned SiO x/Si Substrates by Molecular Beam Epitaxy. Technical Physics Letters, 46(11), 1080-1083. https://doi.org/10.1134/S1063785020110061

Vancouver

Gridchin VO, Kotlyar KP, Reznik RR, Dvoretskaya LN, Parfen’eva AV, Mukhin IS и пр. Selective-Area Growth of GaN Nanowires on Patterned SiO x/Si Substrates by Molecular Beam Epitaxy. Technical Physics Letters. 2020 Нояб.;46(11):1080-1083. https://doi.org/10.1134/S1063785020110061

Author

Gridchin, V. O. ; Kotlyar, K. P. ; Reznik, R. R. ; Dvoretskaya, L. N. ; Parfen’eva, A. V. ; Mukhin, I. S. ; Cirlin, G. E. / Selective-Area Growth of GaN Nanowires on Patterned SiO x/Si Substrates by Molecular Beam Epitaxy. в: Technical Physics Letters. 2020 ; Том 46, № 11. стр. 1080-1083.

BibTeX

@article{08dbdaba4ad24b64b97de7fa10e47cf3,
title = "Selective-Area Growth of GaN Nanowires on Patterned SiO x/Si Substrates by Molecular Beam Epitaxy",
abstract = "Abstract: We demonstrate the possibility of selective-area growth of ordered arrays of GaN nanowires by molecular beam epitaxy on SiOx/Si substrates patterned by photolithography with microspherical lenses without the preliminary formation of seed layers. The effect of the substrate temperature on the morphological properties of the obtained arrays of nanowitres is studied. The optimal growth parameters ensuring the selective-area growth of GaN nanowires are experimentally found.",
keywords = "GaN, microsphere lithography, molecular beam epitaxy, morphological properties, nanowires, selective-area growth",
author = "Gridchin, {V. O.} and Kotlyar, {K. P.} and Reznik, {R. R.} and Dvoretskaya, {L. N.} and Parfen{\textquoteright}eva, {A. V.} and Mukhin, {I. S.} and Cirlin, {G. E.}",
note = "Publisher Copyright: {\textcopyright} 2020, Pleiades Publishing, Ltd.",
year = "2020",
month = nov,
doi = "10.1134/S1063785020110061",
language = "English",
volume = "46",
pages = "1080--1083",
journal = "Technical Physics Letters",
issn = "1063-7850",
publisher = "МАИК {"}Наука/Интерпериодика{"}",
number = "11",

}

RIS

TY - JOUR

T1 - Selective-Area Growth of GaN Nanowires on Patterned SiO x/Si Substrates by Molecular Beam Epitaxy

AU - Gridchin, V. O.

AU - Kotlyar, K. P.

AU - Reznik, R. R.

AU - Dvoretskaya, L. N.

AU - Parfen’eva, A. V.

AU - Mukhin, I. S.

AU - Cirlin, G. E.

N1 - Publisher Copyright: © 2020, Pleiades Publishing, Ltd.

PY - 2020/11

Y1 - 2020/11

N2 - Abstract: We demonstrate the possibility of selective-area growth of ordered arrays of GaN nanowires by molecular beam epitaxy on SiOx/Si substrates patterned by photolithography with microspherical lenses without the preliminary formation of seed layers. The effect of the substrate temperature on the morphological properties of the obtained arrays of nanowitres is studied. The optimal growth parameters ensuring the selective-area growth of GaN nanowires are experimentally found.

AB - Abstract: We demonstrate the possibility of selective-area growth of ordered arrays of GaN nanowires by molecular beam epitaxy on SiOx/Si substrates patterned by photolithography with microspherical lenses without the preliminary formation of seed layers. The effect of the substrate temperature on the morphological properties of the obtained arrays of nanowitres is studied. The optimal growth parameters ensuring the selective-area growth of GaN nanowires are experimentally found.

KW - GaN

KW - microsphere lithography

KW - molecular beam epitaxy

KW - morphological properties

KW - nanowires

KW - selective-area growth

UR - http://www.scopus.com/inward/record.url?scp=85104573888&partnerID=8YFLogxK

U2 - 10.1134/S1063785020110061

DO - 10.1134/S1063785020110061

M3 - Article

AN - SCOPUS:85104573888

VL - 46

SP - 1080

EP - 1083

JO - Technical Physics Letters

JF - Technical Physics Letters

SN - 1063-7850

IS - 11

ER -

ID: 97045333