DOI

Abstract: We demonstrate the possibility of selective-area growth of ordered arrays of GaN nanowires by molecular beam epitaxy on SiOx/Si substrates patterned by photolithography with microspherical lenses without the preliminary formation of seed layers. The effect of the substrate temperature on the morphological properties of the obtained arrays of nanowitres is studied. The optimal growth parameters ensuring the selective-area growth of GaN nanowires are experimentally found.

Язык оригиналаанглийский
Страницы (с-по)1080-1083
Число страниц4
ЖурналTechnical Physics Letters
Том46
Номер выпуска11
DOI
СостояниеОпубликовано - ноя 2020

    Предметные области Scopus

  • Физика и астрономия (разное)

ID: 97045333