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Peculiarities of the structural properties of InxGa1-xN polytype nanostructures grown by molecular-beam epitaxy. / Gridchin, V. O.; Kotlyar, K. P.; Reznik, R. R.; Shevchuk, D. S.; Kirilenko, D. A.; Bert, N. A.; Soshnikov, I. P.; Cirlin, G. E.

в: Journal of Physics: Conference Series, Том 1482, № 1, 012014, 25.03.2020.

Результаты исследований: Научные публикации в периодических изданияхстатья в журнале по материалам конференцииРецензирование

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@article{3a01ab64a5f34b218c7c027daf8a3470,
title = "Peculiarities of the structural properties of InxGa1-xN polytype nanostructures grown by molecular-beam epitaxy",
abstract = "In the article, the study of the morphology, crystal structure and chemical composition of InxGa1-xN nanostructures is presented. Scanning electron microscopy measurements show that the sample has a structure consisting of nanotubes, on top of which an array of nanocrystals (so-called {"}nanoflowers{"}) is formed. The results of transmission electron microscopy show that the nanotubes have a wurtzite crystal structure, whereas the {"}nanoflowers{"} exhibit both wurtzite and zinc blende one. The indium composition in wurtzite and zinc blende segments is about 20 % and 10 %, respectively.",
author = "Gridchin, {V. O.} and Kotlyar, {K. P.} and Reznik, {R. R.} and Shevchuk, {D. S.} and Kirilenko, {D. A.} and Bert, {N. A.} and Soshnikov, {I. P.} and Cirlin, {G. E.}",
note = "Publisher Copyright: {\textcopyright} 2019 Published under licence by IOP Publishing Ltd.; 21st Russian Youth Conference on Physics of Semiconductors and Nanostructures, Opto- and Nanoelectronics, RYCPS 2019 ; Conference date: 25-11-2019 Through 29-11-2019",
year = "2020",
month = mar,
day = "25",
doi = "10.1088/1742-6596/1482/1/012014",
language = "English",
volume = "1482",
journal = "Journal of Physics: Conference Series",
issn = "1742-6588",
publisher = "IOP Publishing Ltd.",
number = "1",

}

RIS

TY - JOUR

T1 - Peculiarities of the structural properties of InxGa1-xN polytype nanostructures grown by molecular-beam epitaxy

AU - Gridchin, V. O.

AU - Kotlyar, K. P.

AU - Reznik, R. R.

AU - Shevchuk, D. S.

AU - Kirilenko, D. A.

AU - Bert, N. A.

AU - Soshnikov, I. P.

AU - Cirlin, G. E.

N1 - Publisher Copyright: © 2019 Published under licence by IOP Publishing Ltd.

PY - 2020/3/25

Y1 - 2020/3/25

N2 - In the article, the study of the morphology, crystal structure and chemical composition of InxGa1-xN nanostructures is presented. Scanning electron microscopy measurements show that the sample has a structure consisting of nanotubes, on top of which an array of nanocrystals (so-called "nanoflowers") is formed. The results of transmission electron microscopy show that the nanotubes have a wurtzite crystal structure, whereas the "nanoflowers" exhibit both wurtzite and zinc blende one. The indium composition in wurtzite and zinc blende segments is about 20 % and 10 %, respectively.

AB - In the article, the study of the morphology, crystal structure and chemical composition of InxGa1-xN nanostructures is presented. Scanning electron microscopy measurements show that the sample has a structure consisting of nanotubes, on top of which an array of nanocrystals (so-called "nanoflowers") is formed. The results of transmission electron microscopy show that the nanotubes have a wurtzite crystal structure, whereas the "nanoflowers" exhibit both wurtzite and zinc blende one. The indium composition in wurtzite and zinc blende segments is about 20 % and 10 %, respectively.

UR - http://www.scopus.com/inward/record.url?scp=85082991155&partnerID=8YFLogxK

U2 - 10.1088/1742-6596/1482/1/012014

DO - 10.1088/1742-6596/1482/1/012014

M3 - Conference article

VL - 1482

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

SN - 1742-6588

IS - 1

M1 - 012014

T2 - 21st Russian Youth Conference on Physics of Semiconductors and Nanostructures, Opto- and Nanoelectronics, RYCPS 2019

Y2 - 25 November 2019 through 29 November 2019

ER -

ID: 98512370