Standard

Pb-catalyzed GaAs nanowires grown by molecular beam epitaxy on Si substrate. / Сибирёв, Николай Владимирович; Штром, Игорь Викторович; Илькив, Игорь Владимирович; Сошников, Илья Петрович; Резник, Родион Романович; Цырлин, Георгий Эрнстович.

2024 International Conference Laser Optics, ICLO 2024 - Proceedings. 2024. стр. 354 (IEEE Xplore Digital Library).

Результаты исследований: Публикации в книгах, отчётах, сборниках, трудах конференций › статья в сборнике материалов конференции › научная › Рецензирование

Harvard

Сибирёв, НВ, Штром, ИВ, Илькив, ИВ, Сошников, ИП, Резник, РР & Цырлин, ГЭ 2024, Pb-catalyzed GaAs nanowires grown by molecular beam epitaxy on Si substrate. в 2024 International Conference Laser Optics, ICLO 2024 - Proceedings. IEEE Xplore Digital Library, стр. 354, 21st International Conference Laser Optics, Санкт-Петербург, Российская Федерация, 1/07/24. https://doi.org/10.1109/ICLO59702.2024.10624345

APA

Сибирёв, Н. В., Штром, И. В., Илькив, И. В., Сошников, И. П., Резник, Р. Р., & Цырлин, Г. Э. (2024). Pb-catalyzed GaAs nanowires grown by molecular beam epitaxy on Si substrate. в 2024 International Conference Laser Optics, ICLO 2024 - Proceedings (стр. 354). (IEEE Xplore Digital Library). https://doi.org/10.1109/ICLO59702.2024.10624345

Vancouver

Сибирёв НВ, Штром ИВ, Илькив ИВ, Сошников ИП, Резник РР, Цырлин ГЭ. Pb-catalyzed GaAs nanowires grown by molecular beam epitaxy on Si substrate. в 2024 International Conference Laser Optics, ICLO 2024 - Proceedings. 2024. стр. 354. (IEEE Xplore Digital Library). https://doi.org/10.1109/ICLO59702.2024.10624345

Author

Сибирёв, Николай Владимирович ; Штром, Игорь Викторович ; Илькив, Игорь Владимирович ; Сошников, Илья Петрович ; Резник, Родион Романович ; Цырлин, Георгий Эрнстович. / Pb-catalyzed GaAs nanowires grown by molecular beam epitaxy on Si substrate. 2024 International Conference Laser Optics, ICLO 2024 - Proceedings. 2024. стр. 354 (IEEE Xplore Digital Library).

BibTeX

@inproceedings{b67331ad09614bba8566f9777e60db1a,
title = "Pb-catalyzed GaAs nanowires grown by molecular beam epitaxy on Si substrate",
abstract = "For n-type doping of A3B5 semiconductors silicon are commonly used. However, Si in A3B5 nanowire is p-type dopant. Species are incorporated into nanowire through the intermediate liquid phase. Solubility of metals in catalyst are usually much more than nitrogen family elements. Nitrogen family elements easily dissolve in metal carbon family elements such as lead and tin. Here we discuss the growth of GaAs nanowires with lead catalyst on Si substrate. Lead could easily dissolve nitrogen family elements as well as boron family elements, which allows to switch nanowire growth from metal-rich to pnictide-rich growth.",
keywords = "GaAs nanowires, catalyst, doping, molecular beam epitaxy, n-type, p-type",
author = "Сибирёв, {Николай Владимирович} and Штром, {Игорь Викторович} and Илькив, {Игорь Владимирович} and Сошников, {Илья Петрович} and Резник, {Родион Романович} and Цырлин, {Георгий Эрнстович}",
year = "2024",
month = jul,
day = "1",
doi = "10.1109/ICLO59702.2024.10624345",
language = "English",
isbn = "9798350390674",
series = "IEEE Xplore Digital Library",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "354",
booktitle = "2024 International Conference Laser Optics, ICLO 2024 - Proceedings",
note = "21st International Conference Laser Optics, ICLO 2024 ; Conference date: 01-07-2024 Through 05-07-2024",
url = "https://laseroptics.org/, https://laseroptics.org",

}

RIS

TY - GEN

T1 - Pb-catalyzed GaAs nanowires grown by molecular beam epitaxy on Si substrate

AU - Сибирёв, Николай Владимирович

AU - Штром, Игорь Викторович

AU - Илькив, Игорь Владимирович

AU - Сошников, Илья Петрович

AU - Резник, Родион Романович

AU - Цырлин, Георгий Эрнстович

N1 - Conference code: 21

PY - 2024/7/1

Y1 - 2024/7/1

N2 - For n-type doping of A3B5 semiconductors silicon are commonly used. However, Si in A3B5 nanowire is p-type dopant. Species are incorporated into nanowire through the intermediate liquid phase. Solubility of metals in catalyst are usually much more than nitrogen family elements. Nitrogen family elements easily dissolve in metal carbon family elements such as lead and tin. Here we discuss the growth of GaAs nanowires with lead catalyst on Si substrate. Lead could easily dissolve nitrogen family elements as well as boron family elements, which allows to switch nanowire growth from metal-rich to pnictide-rich growth.

AB - For n-type doping of A3B5 semiconductors silicon are commonly used. However, Si in A3B5 nanowire is p-type dopant. Species are incorporated into nanowire through the intermediate liquid phase. Solubility of metals in catalyst are usually much more than nitrogen family elements. Nitrogen family elements easily dissolve in metal carbon family elements such as lead and tin. Here we discuss the growth of GaAs nanowires with lead catalyst on Si substrate. Lead could easily dissolve nitrogen family elements as well as boron family elements, which allows to switch nanowire growth from metal-rich to pnictide-rich growth.

KW - GaAs nanowires

KW - catalyst

KW - doping

KW - molecular beam epitaxy

KW - n-type

KW - p-type

UR - https://ieeexplore.ieee.org/document/10624345

UR - https://www.mendeley.com/catalogue/8b72dd06-5c72-3d92-95fc-de9ab4bc3365/

U2 - 10.1109/ICLO59702.2024.10624345

DO - 10.1109/ICLO59702.2024.10624345

M3 - Conference contribution

SN - 9798350390674

T3 - IEEE Xplore Digital Library

SP - 354

BT - 2024 International Conference Laser Optics, ICLO 2024 - Proceedings

T2 - 21st International Conference Laser Optics

Y2 - 1 July 2024 through 5 July 2024

ER -

ID: 124439923