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Parameter-Free Model of the Self-Catalyzed Growth of Ga(As,P) Nanowires. / Sibirev, N. V.; Berdnikov, Yu S.; Fedorov, V. V.; Shtrom, I. V.; Bolshakov, A. D.

в: Semiconductors, Том 56, № 1, 01.2022, стр. 14-17.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Sibirev, NV, Berdnikov, YS, Fedorov, VV, Shtrom, IV & Bolshakov, AD 2022, 'Parameter-Free Model of the Self-Catalyzed Growth of Ga(As,P) Nanowires', Semiconductors, Том. 56, № 1, стр. 14-17. https://doi.org/10.1134/s1063782622010134

APA

Sibirev, N. V., Berdnikov, Y. S., Fedorov, V. V., Shtrom, I. V., & Bolshakov, A. D. (2022). Parameter-Free Model of the Self-Catalyzed Growth of Ga(As,P) Nanowires. Semiconductors, 56(1), 14-17. https://doi.org/10.1134/s1063782622010134

Vancouver

Sibirev NV, Berdnikov YS, Fedorov VV, Shtrom IV, Bolshakov AD. Parameter-Free Model of the Self-Catalyzed Growth of Ga(As,P) Nanowires. Semiconductors. 2022 Янв.;56(1):14-17. https://doi.org/10.1134/s1063782622010134

Author

Sibirev, N. V. ; Berdnikov, Yu S. ; Fedorov, V. V. ; Shtrom, I. V. ; Bolshakov, A. D. / Parameter-Free Model of the Self-Catalyzed Growth of Ga(As,P) Nanowires. в: Semiconductors. 2022 ; Том 56, № 1. стр. 14-17.

BibTeX

@article{5f9e4fed0ea64d8c9a113b58d5b532fa,
title = "Parameter-Free Model of the Self-Catalyzed Growth of Ga(As,P) Nanowires",
abstract = "Abstract—: A precise model for calculating the dependence of the composition of self-catalyzed Ga(As,P) nanowires on the growth parameters without any fitting parameters is proposed. It is shown that the Ga(As, P)-nanowire composition does not depend on the growth rate at a fixed ratio of the total fluxes of Group-V- and Group-III atoms. The results of modeling are in good agreement with the experimentally observed dependence of the Ga(As,P) nanowire composition on the ratio of the fluxes of As and P atoms.",
author = "Sibirev, {N. V.} and Berdnikov, {Yu S.} and Fedorov, {V. V.} and Shtrom, {I. V.} and Bolshakov, {A. D.}",
note = "Publisher Copyright: {\textcopyright} 2022, Pleiades Publishing, Ltd.",
year = "2022",
month = jan,
doi = "10.1134/s1063782622010134",
language = "English",
volume = "56",
pages = "14--17",
journal = "Semiconductors",
issn = "1063-7826",
publisher = "МАИК {"}Наука/Интерпериодика{"}",
number = "1",

}

RIS

TY - JOUR

T1 - Parameter-Free Model of the Self-Catalyzed Growth of Ga(As,P) Nanowires

AU - Sibirev, N. V.

AU - Berdnikov, Yu S.

AU - Fedorov, V. V.

AU - Shtrom, I. V.

AU - Bolshakov, A. D.

N1 - Publisher Copyright: © 2022, Pleiades Publishing, Ltd.

PY - 2022/1

Y1 - 2022/1

N2 - Abstract—: A precise model for calculating the dependence of the composition of self-catalyzed Ga(As,P) nanowires on the growth parameters without any fitting parameters is proposed. It is shown that the Ga(As, P)-nanowire composition does not depend on the growth rate at a fixed ratio of the total fluxes of Group-V- and Group-III atoms. The results of modeling are in good agreement with the experimentally observed dependence of the Ga(As,P) nanowire composition on the ratio of the fluxes of As and P atoms.

AB - Abstract—: A precise model for calculating the dependence of the composition of self-catalyzed Ga(As,P) nanowires on the growth parameters without any fitting parameters is proposed. It is shown that the Ga(As, P)-nanowire composition does not depend on the growth rate at a fixed ratio of the total fluxes of Group-V- and Group-III atoms. The results of modeling are in good agreement with the experimentally observed dependence of the Ga(As,P) nanowire composition on the ratio of the fluxes of As and P atoms.

UR - http://www.scopus.com/inward/record.url?scp=85129949234&partnerID=8YFLogxK

UR - https://www.mendeley.com/catalogue/60bb9065-338f-318d-bd44-610a74f6c765/

U2 - 10.1134/s1063782622010134

DO - 10.1134/s1063782622010134

M3 - Article

AN - SCOPUS:85129949234

VL - 56

SP - 14

EP - 17

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 1

ER -

ID: 100350835