Research output: Contribution to journal › Article › peer-review
Parameter-Free Model of the Self-Catalyzed Growth of Ga(As,P) Nanowires. / Sibirev, N. V.; Berdnikov, Yu S.; Fedorov, V. V.; Shtrom, I. V.; Bolshakov, A. D.
In: Semiconductors, Vol. 56, No. 1, 01.2022, p. 14-17.Research output: Contribution to journal › Article › peer-review
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TY - JOUR
T1 - Parameter-Free Model of the Self-Catalyzed Growth of Ga(As,P) Nanowires
AU - Sibirev, N. V.
AU - Berdnikov, Yu S.
AU - Fedorov, V. V.
AU - Shtrom, I. V.
AU - Bolshakov, A. D.
N1 - Publisher Copyright: © 2022, Pleiades Publishing, Ltd.
PY - 2022/1
Y1 - 2022/1
N2 - Abstract—: A precise model for calculating the dependence of the composition of self-catalyzed Ga(As,P) nanowires on the growth parameters without any fitting parameters is proposed. It is shown that the Ga(As, P)-nanowire composition does not depend on the growth rate at a fixed ratio of the total fluxes of Group-V- and Group-III atoms. The results of modeling are in good agreement with the experimentally observed dependence of the Ga(As,P) nanowire composition on the ratio of the fluxes of As and P atoms.
AB - Abstract—: A precise model for calculating the dependence of the composition of self-catalyzed Ga(As,P) nanowires on the growth parameters without any fitting parameters is proposed. It is shown that the Ga(As, P)-nanowire composition does not depend on the growth rate at a fixed ratio of the total fluxes of Group-V- and Group-III atoms. The results of modeling are in good agreement with the experimentally observed dependence of the Ga(As,P) nanowire composition on the ratio of the fluxes of As and P atoms.
UR - http://www.scopus.com/inward/record.url?scp=85129949234&partnerID=8YFLogxK
UR - https://www.mendeley.com/catalogue/60bb9065-338f-318d-bd44-610a74f6c765/
U2 - 10.1134/s1063782622010134
DO - 10.1134/s1063782622010134
M3 - Article
AN - SCOPUS:85129949234
VL - 56
SP - 14
EP - 17
JO - Semiconductors
JF - Semiconductors
SN - 1063-7826
IS - 1
ER -
ID: 100350835