Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
Abstract—: A precise model for calculating the dependence of the composition of self-catalyzed Ga(As,P) nanowires on the growth parameters without any fitting parameters is proposed. It is shown that the Ga(As, P)-nanowire composition does not depend on the growth rate at a fixed ratio of the total fluxes of Group-V- and Group-III atoms. The results of modeling are in good agreement with the experimentally observed dependence of the Ga(As,P) nanowire composition on the ratio of the fluxes of As and P atoms.
Язык оригинала | английский |
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Страницы (с-по) | 14-17 |
Число страниц | 4 |
Журнал | Semiconductors |
Том | 56 |
Номер выпуска | 1 |
DOI | |
Состояние | Опубликовано - янв 2022 |
ID: 100350835