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New method for MBE growth of GaAs nanowires on silicon using colloidal Au nanoparticles. / Bouravleuv, A.; Ilkiv, I.; Reznik, R.; Kotlyar, K.; Soshnikov, I.; Cirlin, G. E.; Brunkov, P.; Kirilenko, D.; Bondarenko, L.; Nepomnyaschiy, A.; Gruznev, D.; Zotov, A.; Saranin, A.; Dhaka, V.; Lipsanen, H.

в: Nanotechnology, Том 29, № 4, 045602, 26.01.2018.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Bouravleuv, A, Ilkiv, I, Reznik, R, Kotlyar, K, Soshnikov, I, Cirlin, GE, Brunkov, P, Kirilenko, D, Bondarenko, L, Nepomnyaschiy, A, Gruznev, D, Zotov, A, Saranin, A, Dhaka, V & Lipsanen, H 2018, 'New method for MBE growth of GaAs nanowires on silicon using colloidal Au nanoparticles', Nanotechnology, Том. 29, № 4, 045602. https://doi.org/10.1088/1361-6528/aa9ab1

APA

Bouravleuv, A., Ilkiv, I., Reznik, R., Kotlyar, K., Soshnikov, I., Cirlin, G. E., Brunkov, P., Kirilenko, D., Bondarenko, L., Nepomnyaschiy, A., Gruznev, D., Zotov, A., Saranin, A., Dhaka, V., & Lipsanen, H. (2018). New method for MBE growth of GaAs nanowires on silicon using colloidal Au nanoparticles. Nanotechnology, 29(4), [045602]. https://doi.org/10.1088/1361-6528/aa9ab1

Vancouver

Bouravleuv A, Ilkiv I, Reznik R, Kotlyar K, Soshnikov I, Cirlin GE и пр. New method for MBE growth of GaAs nanowires on silicon using colloidal Au nanoparticles. Nanotechnology. 2018 Янв. 26;29(4). 045602. https://doi.org/10.1088/1361-6528/aa9ab1

Author

Bouravleuv, A. ; Ilkiv, I. ; Reznik, R. ; Kotlyar, K. ; Soshnikov, I. ; Cirlin, G. E. ; Brunkov, P. ; Kirilenko, D. ; Bondarenko, L. ; Nepomnyaschiy, A. ; Gruznev, D. ; Zotov, A. ; Saranin, A. ; Dhaka, V. ; Lipsanen, H. / New method for MBE growth of GaAs nanowires on silicon using colloidal Au nanoparticles. в: Nanotechnology. 2018 ; Том 29, № 4.

BibTeX

@article{6b39f2f2e83d411399534e0f74b6599d,
title = "New method for MBE growth of GaAs nanowires on silicon using colloidal Au nanoparticles",
abstract = "We present a new method for the deposition of colloidal Au nanoparticles on the surface of silicon substrates based on short-time Ar plasma treatment without the use of any polymeric layers. The elaborated method is compatible with molecular beam epitaxy, which allowed us to carry out the detailed study of GaAs nanowire synthesis on Si(111) substrates using colloidal Au nanoparticles as seeds for their growth. The results obtained elucidated the causes of the difference between the initial nanoparticle sizes and the diameters of the grown nanowires.",
keywords = "Ar plasma treatment, Au nanoparticles, GaAs nanowires, molecular beam epitaxy, Si",
author = "A. Bouravleuv and I. Ilkiv and R. Reznik and K. Kotlyar and I. Soshnikov and Cirlin, {G. E.} and P. Brunkov and D. Kirilenko and L. Bondarenko and A. Nepomnyaschiy and D. Gruznev and A. Zotov and A. Saranin and V. Dhaka and H. Lipsanen",
note = "Publisher Copyright: {\textcopyright} 2017 IOP Publishing Ltd.",
year = "2018",
month = jan,
day = "26",
doi = "10.1088/1361-6528/aa9ab1",
language = "English",
volume = "29",
journal = "Nanotechnology",
issn = "0957-4484",
publisher = "IOP Publishing Ltd.",
number = "4",

}

RIS

TY - JOUR

T1 - New method for MBE growth of GaAs nanowires on silicon using colloidal Au nanoparticles

AU - Bouravleuv, A.

AU - Ilkiv, I.

AU - Reznik, R.

AU - Kotlyar, K.

AU - Soshnikov, I.

AU - Cirlin, G. E.

AU - Brunkov, P.

AU - Kirilenko, D.

AU - Bondarenko, L.

AU - Nepomnyaschiy, A.

AU - Gruznev, D.

AU - Zotov, A.

AU - Saranin, A.

AU - Dhaka, V.

AU - Lipsanen, H.

N1 - Publisher Copyright: © 2017 IOP Publishing Ltd.

PY - 2018/1/26

Y1 - 2018/1/26

N2 - We present a new method for the deposition of colloidal Au nanoparticles on the surface of silicon substrates based on short-time Ar plasma treatment without the use of any polymeric layers. The elaborated method is compatible with molecular beam epitaxy, which allowed us to carry out the detailed study of GaAs nanowire synthesis on Si(111) substrates using colloidal Au nanoparticles as seeds for their growth. The results obtained elucidated the causes of the difference between the initial nanoparticle sizes and the diameters of the grown nanowires.

AB - We present a new method for the deposition of colloidal Au nanoparticles on the surface of silicon substrates based on short-time Ar plasma treatment without the use of any polymeric layers. The elaborated method is compatible with molecular beam epitaxy, which allowed us to carry out the detailed study of GaAs nanowire synthesis on Si(111) substrates using colloidal Au nanoparticles as seeds for their growth. The results obtained elucidated the causes of the difference between the initial nanoparticle sizes and the diameters of the grown nanowires.

KW - Ar plasma treatment

KW - Au nanoparticles

KW - GaAs nanowires

KW - molecular beam epitaxy

KW - Si

UR - http://www.scopus.com/inward/record.url?scp=85039760499&partnerID=8YFLogxK

U2 - 10.1088/1361-6528/aa9ab1

DO - 10.1088/1361-6528/aa9ab1

M3 - Article

C2 - 29135463

AN - SCOPUS:85039760499

VL - 29

JO - Nanotechnology

JF - Nanotechnology

SN - 0957-4484

IS - 4

M1 - 045602

ER -

ID: 98509284