MBE growth and Structural Properties of InAs and InGaAs Nanowires with Different Mole Fraction of In on Si and Strongly Mismatched SiC/Si(111) Substrates

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MBE growth and Structural Properties of InAs and InGaAs Nanowires with Different Mole Fraction of In on Si and Strongly Mismatched SiC/Si(111) Substrates. / Reznik, R. R.; Kotlyar, K. P.; Soshnikov, I. P.; Kukushkin, S. A.; Osipov, A. V.; Cirlin, G. E.

в: Semiconductors, Том 52, № 5, 01.05.2018, стр. 651-653.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

BibTeX

@article{9c71529604cb48b1b5b9c54bdb63420d,

title = "MBE growth and Structural Properties of InAs and InGaAs Nanowires with Different Mole Fraction of In on Si and Strongly Mismatched SiC/Si(111) Substrates",

abstract = "The possibility of InAs nanowires MBE growth on silicon (111) substrates with a nanometer buffer layer of silicon carbide has been demonstrated for the first time. The NWs diameter turned out to be smaller than on the silicon substrate—the minimum of NWs diameter was less than 10 nm. In addition, dependence of structural properties of InGaAs nanowires on composition was studied.",

author = "Reznik, {R. R.} and Kotlyar, {K. P.} and Soshnikov, {I. P.} and Kukushkin, {S. A.} and Osipov, {A. V.} and Cirlin, {G. E.}",

note = "Publisher Copyright: {\textcopyright} 2018, Pleiades Publishing, Ltd.",

year = "2018",

month = may,

day = "1",

doi = "10.1134/S1063782618050251",

language = "English",

volume = "52",

pages = "651--653",

journal = "Semiconductors",

issn = "1063-7826",

publisher = "МАИК {"}Наука/Интерпериодика{"}",

number = "5",

}

RIS

TY - JOUR

T1 - MBE growth and Structural Properties of InAs and InGaAs Nanowires with Different Mole Fraction of In on Si and Strongly Mismatched SiC/Si(111) Substrates

AU - Reznik, R. R.

AU - Kotlyar, K. P.

AU - Soshnikov, I. P.

AU - Kukushkin, S. A.

AU - Osipov, A. V.

AU - Cirlin, G. E.

PY - 2018/5/1

Y1 - 2018/5/1

N2 - The possibility of InAs nanowires MBE growth on silicon (111) substrates with a nanometer buffer layer of silicon carbide has been demonstrated for the first time. The NWs diameter turned out to be smaller than on the silicon substrate—the minimum of NWs diameter was less than 10 nm. In addition, dependence of structural properties of InGaAs nanowires on composition was studied.

AB - The possibility of InAs nanowires MBE growth on silicon (111) substrates with a nanometer buffer layer of silicon carbide has been demonstrated for the first time. The NWs diameter turned out to be smaller than on the silicon substrate—the minimum of NWs diameter was less than 10 nm. In addition, dependence of structural properties of InGaAs nanowires on composition was studied.

UR - http://www.scopus.com/inward/record.url?scp=85045748310&partnerID=8YFLogxK

U2 - 10.1134/S1063782618050251

DO - 10.1134/S1063782618050251

M3 - Article

AN - SCOPUS:85045748310

VL - 52

SP - 651

EP - 653

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 5

ER -

ID: 98508788