The possibility of GaAs, AlGaAs and InAs nanowires MBE growth on a silicon substrate with a nanometer silicon carbide buffer layer has been demonstrated for the first time. Under the same experimental conditions (including the same composition) the diameter of the nanowires is smaller than diameter of nanowires grown on silicon substrate. Based on the photoluminescence and TEM analysis it was suggest that when AlGaAs/SiC/Si NWs are grown, a physical complex structure is formed.