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MBE growth and optical properties of III-V nanowires on SiC/Si(111) hybrid substrate. / Reznik, R. R.; Kotlyar, K. P.; Kukushkin, S. A.; Osipov, A. V.; Soshnikov, I. P.; Nikitina, E. V.; Cirlin, G. E.
Proceedings - International Conference Laser Optics 2018, ICLO 2018. Institute of Electrical and Electronics Engineers Inc., 2018. стр. 382 8435191 (Proceedings - International Conference Laser Optics 2018, ICLO 2018).
Результаты исследований: Публикации в книгах, отчётах, сборниках, трудах конференций › статья в сборнике материалов конференции › Рецензирование
Harvard
Reznik, RR, Kotlyar, KP
, Kukushkin, SA, Osipov, AV
, Soshnikov, IP, Nikitina, EV & Cirlin, GE 2018,
MBE growth and optical properties of III-V nanowires on SiC/Si(111) hybrid substrate. в
Proceedings - International Conference Laser Optics 2018, ICLO 2018., 8435191, Proceedings - International Conference Laser Optics 2018, ICLO 2018, Institute of Electrical and Electronics Engineers Inc., стр. 382, 2018 International Conference Laser Optics, ICLO 2018, St. Petersburg, Российская Федерация,
4/06/18.
https://doi.org/10.1109/LO.2018.8435191
APA
Reznik, R. R., Kotlyar, K. P.
, Kukushkin, S. A., Osipov, A. V.
, Soshnikov, I. P., Nikitina, E. V., & Cirlin, G. E. (2018).
MBE growth and optical properties of III-V nanowires on SiC/Si(111) hybrid substrate. в
Proceedings - International Conference Laser Optics 2018, ICLO 2018 (стр. 382). [8435191] (Proceedings - International Conference Laser Optics 2018, ICLO 2018). Institute of Electrical and Electronics Engineers Inc..
https://doi.org/10.1109/LO.2018.8435191
Vancouver
Author
Reznik, R. R. ; Kotlyar, K. P.
; Kukushkin, S. A. ; Osipov, A. V.
; Soshnikov, I. P. ; Nikitina, E. V. ; Cirlin, G. E. /
MBE growth and optical properties of III-V nanowires on SiC/Si(111) hybrid substrate. Proceedings - International Conference Laser Optics 2018, ICLO 2018. Institute of Electrical and Electronics Engineers Inc., 2018. стр. 382 (Proceedings - International Conference Laser Optics 2018, ICLO 2018).
BibTeX
@inproceedings{c16554d1afc04986abacfc5c5854fa59,
title = "MBE growth and optical properties of III-V nanowires on SiC/Si(111) hybrid substrate",
abstract = "The fundamental possibility of MBE III-V nanowires growth on silicon substrate with nanoscale buffer layer of silicon carbide has been demonstrated for the first time. Morphological and spectral properties of the resulting systems have been studied and compared with properties of such nanowires on silicon substrates.",
keywords = "Molecular-beam epitaxy, Nanostructures, Nanowires, Semiconductors, Silicon, Silicon carbide",
author = "Reznik, {R. R.} and Kotlyar, {K. P.} and Kukushkin, {S. A.} and Osipov, {A. V.} and Soshnikov, {I. P.} and Nikitina, {E. V.} and Cirlin, {G. E.}",
note = "Publisher Copyright: {\textcopyright} 2018 IEEE.; 2018 International Conference Laser Optics, ICLO 2018 ; Conference date: 04-06-2018 Through 08-06-2018",
year = "2018",
month = aug,
day = "13",
doi = "10.1109/LO.2018.8435191",
language = "English",
isbn = "9781538636121",
series = "Proceedings - International Conference Laser Optics 2018, ICLO 2018",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "382",
booktitle = "Proceedings - International Conference Laser Optics 2018, ICLO 2018",
address = "United States",
}
RIS
TY - GEN
T1 - MBE growth and optical properties of III-V nanowires on SiC/Si(111) hybrid substrate
AU - Reznik, R. R.
AU - Kotlyar, K. P.
AU - Kukushkin, S. A.
AU - Osipov, A. V.
AU - Soshnikov, I. P.
AU - Nikitina, E. V.
AU - Cirlin, G. E.
N1 - Publisher Copyright:
© 2018 IEEE.
PY - 2018/8/13
Y1 - 2018/8/13
N2 - The fundamental possibility of MBE III-V nanowires growth on silicon substrate with nanoscale buffer layer of silicon carbide has been demonstrated for the first time. Morphological and spectral properties of the resulting systems have been studied and compared with properties of such nanowires on silicon substrates.
AB - The fundamental possibility of MBE III-V nanowires growth on silicon substrate with nanoscale buffer layer of silicon carbide has been demonstrated for the first time. Morphological and spectral properties of the resulting systems have been studied and compared with properties of such nanowires on silicon substrates.
KW - Molecular-beam epitaxy
KW - Nanostructures
KW - Nanowires
KW - Semiconductors
KW - Silicon
KW - Silicon carbide
UR - http://www.scopus.com/inward/record.url?scp=85052514406&partnerID=8YFLogxK
U2 - 10.1109/LO.2018.8435191
DO - 10.1109/LO.2018.8435191
M3 - Conference contribution
AN - SCOPUS:85052514406
SN - 9781538636121
T3 - Proceedings - International Conference Laser Optics 2018, ICLO 2018
SP - 382
BT - Proceedings - International Conference Laser Optics 2018, ICLO 2018
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2018 International Conference Laser Optics, ICLO 2018
Y2 - 4 June 2018 through 8 June 2018
ER -
