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MBE growth and optical properties of GaN nanowires on SiC/Si(111) hybrid substrate. / Reznik, R. R.; Kotlyar, K. P.; Ilkiv, I. V.; Kukushkin, S. A.; Osipov, A. V.; Soshnikov, I. P.; Nikitina, E. V.; Cirlin, G. E.
Proceedings - 2016 International Conference Laser Optics, LO 2016. Institute of Electrical and Electronics Engineers Inc., 2016. стр. R92 7549902 (Proceedings - 2016 International Conference Laser Optics, LO 2016).
Результаты исследований: Публикации в книгах, отчётах, сборниках, трудах конференций › статья в сборнике материалов конференции › научная › Рецензирование
Harvard
Reznik, RR, Kotlyar, KP, Ilkiv, IV, Kukushkin, SA, Osipov, AV, Soshnikov, IP, Nikitina, EV & Cirlin, GE 2016,
MBE growth and optical properties of GaN nanowires on SiC/Si(111) hybrid substrate. в
Proceedings - 2016 International Conference Laser Optics, LO 2016., 7549902, Proceedings - 2016 International Conference Laser Optics, LO 2016, Institute of Electrical and Electronics Engineers Inc., стр. R92, 2016 International Conference Laser Optics, LO 2016, St. Petersburg, Российская Федерация,
26/06/16.
https://doi.org/10.1109/LO.2016.7549902
APA
Reznik, R. R., Kotlyar, K. P., Ilkiv, I. V., Kukushkin, S. A., Osipov, A. V., Soshnikov, I. P., Nikitina, E. V., & Cirlin, G. E. (2016).
MBE growth and optical properties of GaN nanowires on SiC/Si(111) hybrid substrate. в
Proceedings - 2016 International Conference Laser Optics, LO 2016 (стр. R92). [7549902] (Proceedings - 2016 International Conference Laser Optics, LO 2016). Institute of Electrical and Electronics Engineers Inc..
https://doi.org/10.1109/LO.2016.7549902
Vancouver
Author
Reznik, R. R. ; Kotlyar, K. P. ; Ilkiv, I. V. ; Kukushkin, S. A. ; Osipov, A. V. ; Soshnikov, I. P. ; Nikitina, E. V. ; Cirlin, G. E. /
MBE growth and optical properties of GaN nanowires on SiC/Si(111) hybrid substrate. Proceedings - 2016 International Conference Laser Optics, LO 2016. Institute of Electrical and Electronics Engineers Inc., 2016. стр. R92 (Proceedings - 2016 International Conference Laser Optics, LO 2016).
BibTeX
@inproceedings{d1f2bd6500434842b5eef447c50bce69,
title = "MBE growth and optical properties of GaN nanowires on SiC/Si(111) hybrid substrate",
abstract = "The fundamental possibility of the MBE GaN nanowires growth on silicon substrate with nanoscale buffer layer of silicon carbide has been demonstrated for the first time. Morphological and spectral properties of the resulting system have been studied and compared properties of GaN nanowires on silicon substrate.",
keywords = "molecular-beam epitaxy, nanostructures, nanowires, semiconductors, silicon, silicon carbide",
author = "Reznik, {R. R.} and Kotlyar, {K. P.} and Ilkiv, {I. V.} and Kukushkin, {S. A.} and Osipov, {A. V.} and Soshnikov, {I. P.} and Nikitina, {E. V.} and Cirlin, {G. E.}",
note = "Publisher Copyright: {\textcopyright} 2016 IEEE.; 2016 International Conference Laser Optics, LO 2016 ; Conference date: 26-06-2016 Through 30-06-2016",
year = "2016",
month = aug,
day = "23",
doi = "10.1109/LO.2016.7549902",
language = "English",
series = "Proceedings - 2016 International Conference Laser Optics, LO 2016",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "R92",
booktitle = "Proceedings - 2016 International Conference Laser Optics, LO 2016",
address = "United States",
}
RIS
TY - GEN
T1 - MBE growth and optical properties of GaN nanowires on SiC/Si(111) hybrid substrate
AU - Reznik, R. R.
AU - Kotlyar, K. P.
AU - Ilkiv, I. V.
AU - Kukushkin, S. A.
AU - Osipov, A. V.
AU - Soshnikov, I. P.
AU - Nikitina, E. V.
AU - Cirlin, G. E.
N1 - Publisher Copyright:
© 2016 IEEE.
PY - 2016/8/23
Y1 - 2016/8/23
N2 - The fundamental possibility of the MBE GaN nanowires growth on silicon substrate with nanoscale buffer layer of silicon carbide has been demonstrated for the first time. Morphological and spectral properties of the resulting system have been studied and compared properties of GaN nanowires on silicon substrate.
AB - The fundamental possibility of the MBE GaN nanowires growth on silicon substrate with nanoscale buffer layer of silicon carbide has been demonstrated for the first time. Morphological and spectral properties of the resulting system have been studied and compared properties of GaN nanowires on silicon substrate.
KW - molecular-beam epitaxy
KW - nanostructures
KW - nanowires
KW - semiconductors
KW - silicon
KW - silicon carbide
UR - http://www.scopus.com/inward/record.url?scp=84987906287&partnerID=8YFLogxK
U2 - 10.1109/LO.2016.7549902
DO - 10.1109/LO.2016.7549902
M3 - Conference contribution
AN - SCOPUS:84987906287
T3 - Proceedings - 2016 International Conference Laser Optics, LO 2016
SP - R92
BT - Proceedings - 2016 International Conference Laser Optics, LO 2016
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2016 International Conference Laser Optics, LO 2016
Y2 - 26 June 2016 through 30 June 2016
ER -
