Standard
MBE growth and optical properties of GaN nanowires on SiC/Si(111) hybrid substrate. / Reznik, R.; Kotlyar, K.; Ilkiv, I.; Soshnikov, I.; Kukushkin, S.; Osipov, A.; Nikitina, E.; Cirlin, G. E.
State-of-the-Art Trends of Scientific Research of Artificial and Natural Nanoobjects, STRANN 2016: Proceedings of the 5th International Conference "State-of-the-Art Trends of Scientific Research of Artificial and Natural Nanoobjects". ред. / Oleg Vyvenko. American Institute of Physics, 2016. 040003 (AIP Conference Proceedings; Том 1748).
Результаты исследований: Публикации в книгах, отчётах, сборниках, трудах конференций › статья в сборнике материалов конференции › научная › Рецензирование
Harvard
Reznik, R, Kotlyar, K, Ilkiv, I, Soshnikov, I
, Kukushkin, S, Osipov, A, Nikitina, E & Cirlin, GE 2016,
MBE growth and optical properties of GaN nanowires on SiC/Si(111) hybrid substrate. в O Vyvenko (ред.),
State-of-the-Art Trends of Scientific Research of Artificial and Natural Nanoobjects, STRANN 2016: Proceedings of the 5th International Conference "State-of-the-Art Trends of Scientific Research of Artificial and Natural Nanoobjects"., 040003, AIP Conference Proceedings, Том. 1748, American Institute of Physics, 5th International Conference on State-of-the-Art Trends of Scientific Research of Artificial and Natural Nanoobjects, STRANN 2016, Saint Petersburg, Российская Федерация,
26/04/16.
https://doi.org/10.1063/1.4954355
APA
Reznik, R., Kotlyar, K., Ilkiv, I., Soshnikov, I.
, Kukushkin, S., Osipov, A., Nikitina, E., & Cirlin, G. E. (2016).
MBE growth and optical properties of GaN nanowires on SiC/Si(111) hybrid substrate. в O. Vyvenko (Ред.),
State-of-the-Art Trends of Scientific Research of Artificial and Natural Nanoobjects, STRANN 2016: Proceedings of the 5th International Conference "State-of-the-Art Trends of Scientific Research of Artificial and Natural Nanoobjects" [040003] (AIP Conference Proceedings; Том 1748). American Institute of Physics.
https://doi.org/10.1063/1.4954355
Vancouver
Author
Reznik, R. ; Kotlyar, K. ; Ilkiv, I. ; Soshnikov, I.
; Kukushkin, S. ; Osipov, A. ; Nikitina, E. ; Cirlin, G. E. /
MBE growth and optical properties of GaN nanowires on SiC/Si(111) hybrid substrate. State-of-the-Art Trends of Scientific Research of Artificial and Natural Nanoobjects, STRANN 2016: Proceedings of the 5th International Conference "State-of-the-Art Trends of Scientific Research of Artificial and Natural Nanoobjects". Редактор / Oleg Vyvenko. American Institute of Physics, 2016. (AIP Conference Proceedings).
BibTeX
@inproceedings{364adb8223054b3aba03bbe023f0a437,
title = "MBE growth and optical properties of GaN nanowires on SiC/Si(111) hybrid substrate",
abstract = "This work demonstrates the possibility of growth of GaN nanowires by molecular epitaxy on a silicon substrate with nanoscale buffer layer of silicon carbide. Morphological and optical properties of the grown arrays are studied. It is shown that the integral intensity of the photoluminescence of such structures is more than 2 times higher than the best NWs GaN structures without buffer layer of silicon carbide.",
author = "R. Reznik and K. Kotlyar and I. Ilkiv and I. Soshnikov and S. Kukushkin and A. Osipov and E. Nikitina and Cirlin, {G. E.}",
note = "Publisher Copyright: {\textcopyright} 2016 Author(s).; 5th International Conference on State-of-the-Art Trends of Scientific Research of Artificial and Natural Nanoobjects, STRANN 2016 ; Conference date: 26-04-2016 Through 29-04-2016",
year = "2016",
month = jun,
day = "17",
doi = "10.1063/1.4954355",
language = "English",
series = "AIP Conference Proceedings",
publisher = "American Institute of Physics",
editor = "Oleg Vyvenko",
booktitle = "State-of-the-Art Trends of Scientific Research of Artificial and Natural Nanoobjects, STRANN 2016",
address = "United States",
}
RIS
TY - GEN
T1 - MBE growth and optical properties of GaN nanowires on SiC/Si(111) hybrid substrate
AU - Reznik, R.
AU - Kotlyar, K.
AU - Ilkiv, I.
AU - Soshnikov, I.
AU - Kukushkin, S.
AU - Osipov, A.
AU - Nikitina, E.
AU - Cirlin, G. E.
N1 - Publisher Copyright:
© 2016 Author(s).
PY - 2016/6/17
Y1 - 2016/6/17
N2 - This work demonstrates the possibility of growth of GaN nanowires by molecular epitaxy on a silicon substrate with nanoscale buffer layer of silicon carbide. Morphological and optical properties of the grown arrays are studied. It is shown that the integral intensity of the photoluminescence of such structures is more than 2 times higher than the best NWs GaN structures without buffer layer of silicon carbide.
AB - This work demonstrates the possibility of growth of GaN nanowires by molecular epitaxy on a silicon substrate with nanoscale buffer layer of silicon carbide. Morphological and optical properties of the grown arrays are studied. It is shown that the integral intensity of the photoluminescence of such structures is more than 2 times higher than the best NWs GaN structures without buffer layer of silicon carbide.
UR - http://www.scopus.com/inward/record.url?scp=84984538778&partnerID=8YFLogxK
U2 - 10.1063/1.4954355
DO - 10.1063/1.4954355
M3 - Conference contribution
AN - SCOPUS:84984538778
T3 - AIP Conference Proceedings
BT - State-of-the-Art Trends of Scientific Research of Artificial and Natural Nanoobjects, STRANN 2016
A2 - Vyvenko, Oleg
PB - American Institute of Physics
T2 - 5th International Conference on State-of-the-Art Trends of Scientific Research of Artificial and Natural Nanoobjects, STRANN 2016
Y2 - 26 April 2016 through 29 April 2016
ER -
