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MBE growth and optical properties of GaN layers on SiC/Si(111) hybrid substrate. / Reznik, R. R.; Kotlyar, K. P.; Soshnikov, I. P.; Kukushkin, S. A.; Osipov, A. V.; Nikitina, E. V.; Cirlin, G. E.

в: Journal of Physics: Conference Series, Том 917, № 3, 032014, 23.11.2017.

Результаты исследований: Научные публикации в периодических изданиях › статья в журнале по материалам конференции › Рецензирование

Harvard

Reznik, RR, Kotlyar, KP, Soshnikov, IP, Kukushkin, SA, Osipov, AV, Nikitina, EV & Cirlin, GE 2017, 'MBE growth and optical properties of GaN layers on SiC/Si(111) hybrid substrate', Journal of Physics: Conference Series, Том. 917, № 3, 032014. https://doi.org/10.1088/1742-6596/917/3/032014

APA

Reznik, R. R., Kotlyar, K. P., Soshnikov, I. P., Kukushkin, S. A., Osipov, A. V., Nikitina, E. V., & Cirlin, G. E. (2017). MBE growth and optical properties of GaN layers on SiC/Si(111) hybrid substrate. Journal of Physics: Conference Series, 917(3), [032014]. https://doi.org/10.1088/1742-6596/917/3/032014

Vancouver

Reznik RR, Kotlyar KP, Soshnikov IP, Kukushkin SA, Osipov AV, Nikitina EV и пр. MBE growth and optical properties of GaN layers on SiC/Si(111) hybrid substrate. Journal of Physics: Conference Series. 2017 Нояб. 23;917(3). 032014. https://doi.org/10.1088/1742-6596/917/3/032014

Author

Reznik, R. R. ; Kotlyar, K. P. ; Soshnikov, I. P. ; Kukushkin, S. A. ; Osipov, A. V. ; Nikitina, E. V. ; Cirlin, G. E. / MBE growth and optical properties of GaN layers on SiC/Si(111) hybrid substrate. в: Journal of Physics: Conference Series. 2017 ; Том 917, № 3.

BibTeX

@article{709fc89545b44a59b1264aa091c53349,
title = "MBE growth and optical properties of GaN layers on SiC/Si(111) hybrid substrate",
abstract = "The fundamental possibility of the growth of GaN layers by molecular-beam epitaxy on a silicon substrate with nanoscale buffer layer of silicon carbide without any AlN layers has been demonstrated for the first time. Morphological properties of the resulting system have been studied.",
author = "Reznik, {R. R.} and Kotlyar, {K. P.} and Soshnikov, {I. P.} and Kukushkin, {S. A.} and Osipov, {A. V.} and Nikitina, {E. V.} and Cirlin, {G. E.}",
note = "Publisher Copyright: {\textcopyright} Published under licence by IOP Publishing Ltd.; 4th International School and Conference {"}Saint Petersburg OPEN 2017{"} on Optoelectronics, Photonics, Engineering and Nanostructures ; Conference date: 03-04-2017 Through 06-04-2017",
year = "2017",
month = nov,
day = "23",
doi = "10.1088/1742-6596/917/3/032014",
language = "English",
volume = "917",
journal = "Journal of Physics: Conference Series",
issn = "1742-6588",
publisher = "IOP Publishing Ltd.",
number = "3",

}

RIS

TY - JOUR

T1 - MBE growth and optical properties of GaN layers on SiC/Si(111) hybrid substrate

AU - Reznik, R. R.

AU - Kotlyar, K. P.

AU - Soshnikov, I. P.

AU - Kukushkin, S. A.

AU - Osipov, A. V.

AU - Nikitina, E. V.

AU - Cirlin, G. E.

N1 - Publisher Copyright: © Published under licence by IOP Publishing Ltd.

PY - 2017/11/23

Y1 - 2017/11/23

N2 - The fundamental possibility of the growth of GaN layers by molecular-beam epitaxy on a silicon substrate with nanoscale buffer layer of silicon carbide without any AlN layers has been demonstrated for the first time. Morphological properties of the resulting system have been studied.

AB - The fundamental possibility of the growth of GaN layers by molecular-beam epitaxy on a silicon substrate with nanoscale buffer layer of silicon carbide without any AlN layers has been demonstrated for the first time. Morphological properties of the resulting system have been studied.

UR - http://www.scopus.com/inward/record.url?scp=85036463631&partnerID=8YFLogxK

U2 - 10.1088/1742-6596/917/3/032014

DO - 10.1088/1742-6596/917/3/032014

M3 - Conference article

AN - SCOPUS:85036463631

VL - 917

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

SN - 1742-6588

IS - 3

M1 - 032014

T2 - 4th International School and Conference "Saint Petersburg OPEN 2017" on Optoelectronics, Photonics, Engineering and Nanostructures

Y2 - 3 April 2017 through 6 April 2017

ER -

ID: 99721057