MBE Growth and Optical Properties of GaN, InN, and A3B5 Nanowires on SiC/Si(111) Hybrid Substrate

Standard

MBE Growth and Optical Properties of GaN, InN, and A³B⁵ Nanowires on SiC/Si(111) Hybrid Substrate. / Reznik, R. R.; Kotlyar, K. P.; Ilkiv, I. V.; Khrebtov, A. I.; Soshnikov, I. P.; Kukushkin, S. A.; Osipov, A. V.; Nikitina, E. V.; Cirlin, G. E.

в: Advances in Condensed Matter Physics, Том 2018, 1040689, 2018.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

BibTeX

@article{1f88db8b0d22414ea21cf4b10369b4e9,

title = "MBE Growth and Optical Properties of GaN, InN, and A3B5 Nanowires on SiC/Si(111) Hybrid Substrate",

abstract = "The possibility of GaN, InN, and A3B5 nanowires MBE growth on a silicon substrate with a nanoscale SiC buffer layer has been demonstrated. Optical studies indicated a higher structural quality GaN NWs compared with the best structures of GaN NWs without silicon carbide buffer layer. The diameter of A3B5 NWs is smaller than diameter of similar NWs which were grown on a silicon substrate, because of higher lattice mismatch. In particular, InAs NWs diameter was evaluated as little as 10 nm, one of the smallest ever demonstrated for this NWs system.",

author = "Reznik, {R. R.} and Kotlyar, {K. P.} and Ilkiv, {I. V.} and Khrebtov, {A. I.} and Soshnikov, {I. P.} and Kukushkin, {S. A.} and Osipov, {A. V.} and Nikitina, {E. V.} and Cirlin, {G. E.}",

note = "Publisher Copyright: {\textcopyright} 2018 R. R. Reznik et al.",

year = "2018",

doi = "10.1155/2018/1040689",

language = "English",

volume = "2018",

journal = "Advances in Condensed Matter Physics",

issn = "1687-8108",

publisher = "Hindawi ",

}

RIS

TY - JOUR

T1 - MBE Growth and Optical Properties of GaN, InN, and A3B5 Nanowires on SiC/Si(111) Hybrid Substrate

AU - Reznik, R. R.

AU - Kotlyar, K. P.

AU - Ilkiv, I. V.

AU - Khrebtov, A. I.

AU - Soshnikov, I. P.

AU - Kukushkin, S. A.

AU - Osipov, A. V.

AU - Nikitina, E. V.

AU - Cirlin, G. E.

PY - 2018

Y1 - 2018

N2 - The possibility of GaN, InN, and A3B5 nanowires MBE growth on a silicon substrate with a nanoscale SiC buffer layer has been demonstrated. Optical studies indicated a higher structural quality GaN NWs compared with the best structures of GaN NWs without silicon carbide buffer layer. The diameter of A3B5 NWs is smaller than diameter of similar NWs which were grown on a silicon substrate, because of higher lattice mismatch. In particular, InAs NWs diameter was evaluated as little as 10 nm, one of the smallest ever demonstrated for this NWs system.

AB - The possibility of GaN, InN, and A3B5 nanowires MBE growth on a silicon substrate with a nanoscale SiC buffer layer has been demonstrated. Optical studies indicated a higher structural quality GaN NWs compared with the best structures of GaN NWs without silicon carbide buffer layer. The diameter of A3B5 NWs is smaller than diameter of similar NWs which were grown on a silicon substrate, because of higher lattice mismatch. In particular, InAs NWs diameter was evaluated as little as 10 nm, one of the smallest ever demonstrated for this NWs system.

UR - http://www.scopus.com/inward/record.url?scp=85049363446&partnerID=8YFLogxK

U2 - 10.1155/2018/1040689

DO - 10.1155/2018/1040689

M3 - Article

AN - SCOPUS:85049363446

VL - 2018

JO - Advances in Condensed Matter Physics

JF - Advances in Condensed Matter Physics

SN - 1687-8108

M1 - 1040689

ER -

ID: 98508360