Standard

Low-Temperature Growth of Au-Catalyzed InAs Nanowires : Experiment and Theory. / Dubrovskii, Vladimir G.; Reznik, Rodion R.; Ilkiv, Igor V.; Kotlyar, Konstantin P.; Soshnikov, Ilya P.; Ubyivovk, Evgenii V.; Mikushev, Sergey V.; Cirlin, George E.

в: Physica Status Solidi - Rapid Research Letters, Том 16, № 1, 2100401, 01.2022.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Dubrovskii, VG, Reznik, RR, Ilkiv, IV, Kotlyar, KP, Soshnikov, IP, Ubyivovk, EV, Mikushev, SV & Cirlin, GE 2022, 'Low-Temperature Growth of Au-Catalyzed InAs Nanowires: Experiment and Theory', Physica Status Solidi - Rapid Research Letters, Том. 16, № 1, 2100401. https://doi.org/10.1002/pssr.202100401, https://doi.org/doi.org/10.1002/pssr.202100401

APA

Dubrovskii, V. G., Reznik, R. R., Ilkiv, I. V., Kotlyar, K. P., Soshnikov, I. P., Ubyivovk, E. V., Mikushev, S. V., & Cirlin, G. E. (2022). Low-Temperature Growth of Au-Catalyzed InAs Nanowires: Experiment and Theory. Physica Status Solidi - Rapid Research Letters, 16(1), [2100401]. https://doi.org/10.1002/pssr.202100401, https://doi.org/doi.org/10.1002/pssr.202100401

Vancouver

Dubrovskii VG, Reznik RR, Ilkiv IV, Kotlyar KP, Soshnikov IP, Ubyivovk EV и пр. Low-Temperature Growth of Au-Catalyzed InAs Nanowires: Experiment and Theory. Physica Status Solidi - Rapid Research Letters. 2022 Янв.;16(1). 2100401. https://doi.org/10.1002/pssr.202100401, https://doi.org/doi.org/10.1002/pssr.202100401

Author

Dubrovskii, Vladimir G. ; Reznik, Rodion R. ; Ilkiv, Igor V. ; Kotlyar, Konstantin P. ; Soshnikov, Ilya P. ; Ubyivovk, Evgenii V. ; Mikushev, Sergey V. ; Cirlin, George E. / Low-Temperature Growth of Au-Catalyzed InAs Nanowires : Experiment and Theory. в: Physica Status Solidi - Rapid Research Letters. 2022 ; Том 16, № 1.

BibTeX

@article{7ae16f60624843d79df0d16cda74208a,
title = "Low-Temperature Growth of Au-Catalyzed InAs Nanowires: Experiment and Theory",
abstract = "Experimental data on the rapid (≈4.4 nm s−1) axial growth rate of narrow (≈9 nm in radius) InAs nanowires (NWs) obtained by Au-catalyzed molecular beam epitaxy on Si substrates at a low surface temperature of 270 °C are presented. These NWs exhibit pure wurtzite crystal structure and an unusually high ratio of the average NW length over the effective thickness of deposited InAs of about 60 despite the presence of parasitic InAs islands on the Si substrate. These trends are explained within a dedicated growth model. In the absence of In evaporation, In atoms either diffuse from the substrate to the NW tips or remain in the parasitic layer. This leads to a linear time dependence of the NW length and other unusual growth properties that are thought to have not previously been accessed.",
keywords = "growth modeling, InAs nanowires, nanowire length, vapor–solid–solid growth, LIQUID-SOLID MECHANISM, ASSISTED GROWTH, MODEL, vapor-solid-solid growth, DROPLET",
author = "Dubrovskii, {Vladimir G.} and Reznik, {Rodion R.} and Ilkiv, {Igor V.} and Kotlyar, {Konstantin P.} and Soshnikov, {Ilya P.} and Ubyivovk, {Evgenii V.} and Mikushev, {Sergey V.} and Cirlin, {George E.}",
note = "Publisher Copyright: {\textcopyright} 2021 Wiley-VCH GmbH",
year = "2022",
month = jan,
doi = "10.1002/pssr.202100401",
language = "English",
volume = "16",
journal = "Physica Status Solidi - Rapid Research Letetrs",
issn = "1862-6254",
publisher = "Wiley-Blackwell",
number = "1",

}

RIS

TY - JOUR

T1 - Low-Temperature Growth of Au-Catalyzed InAs Nanowires

T2 - Experiment and Theory

AU - Dubrovskii, Vladimir G.

AU - Reznik, Rodion R.

AU - Ilkiv, Igor V.

AU - Kotlyar, Konstantin P.

AU - Soshnikov, Ilya P.

AU - Ubyivovk, Evgenii V.

AU - Mikushev, Sergey V.

AU - Cirlin, George E.

N1 - Publisher Copyright: © 2021 Wiley-VCH GmbH

PY - 2022/1

Y1 - 2022/1

N2 - Experimental data on the rapid (≈4.4 nm s−1) axial growth rate of narrow (≈9 nm in radius) InAs nanowires (NWs) obtained by Au-catalyzed molecular beam epitaxy on Si substrates at a low surface temperature of 270 °C are presented. These NWs exhibit pure wurtzite crystal structure and an unusually high ratio of the average NW length over the effective thickness of deposited InAs of about 60 despite the presence of parasitic InAs islands on the Si substrate. These trends are explained within a dedicated growth model. In the absence of In evaporation, In atoms either diffuse from the substrate to the NW tips or remain in the parasitic layer. This leads to a linear time dependence of the NW length and other unusual growth properties that are thought to have not previously been accessed.

AB - Experimental data on the rapid (≈4.4 nm s−1) axial growth rate of narrow (≈9 nm in radius) InAs nanowires (NWs) obtained by Au-catalyzed molecular beam epitaxy on Si substrates at a low surface temperature of 270 °C are presented. These NWs exhibit pure wurtzite crystal structure and an unusually high ratio of the average NW length over the effective thickness of deposited InAs of about 60 despite the presence of parasitic InAs islands on the Si substrate. These trends are explained within a dedicated growth model. In the absence of In evaporation, In atoms either diffuse from the substrate to the NW tips or remain in the parasitic layer. This leads to a linear time dependence of the NW length and other unusual growth properties that are thought to have not previously been accessed.

KW - growth modeling

KW - InAs nanowires

KW - nanowire length

KW - vapor–solid–solid growth

KW - LIQUID-SOLID MECHANISM

KW - ASSISTED GROWTH

KW - MODEL

KW - vapor-solid-solid growth

KW - DROPLET

UR - http://www.scopus.com/inward/record.url?scp=85114724084&partnerID=8YFLogxK

UR - https://www.mendeley.com/catalogue/7adf765b-4d06-31fe-818e-c75de5ddbf02/

U2 - 10.1002/pssr.202100401

DO - 10.1002/pssr.202100401

M3 - Article

AN - SCOPUS:85114724084

VL - 16

JO - Physica Status Solidi - Rapid Research Letetrs

JF - Physica Status Solidi - Rapid Research Letetrs

SN - 1862-6254

IS - 1

M1 - 2100401

ER -

ID: 88748257